Vishay has announced the industry's first winged low-profile, high-current inductor. Designed to be placed on a cut-out PCB, the IHLW-5050CE-01 offers designers a high-current solution using a larger part, without exceeding a profile of 1.2 mm on either side of the PC board.

Vishay has announced that it has extended the resistance tolerance of the RNC90Z family of military-established, Bulk Metal Z-Foil reliability resistors down to ±0.005%. As R level established reliability resistors, RNC90Z devices are military-qualified to MIL PRF 55182/9, the standard for military and aerospace applications requiring long-term stability. The resistors' ability to retain their initial value through temperature change, load appli...

Vishay has announced the release of a new series of radial aluminum capacitors that offers very low impedance values, high capacitances, high ripple currents, and high-temperature operation up to +125°C.

Vishay has released what it says is the industry's first TrenchFET power MOSFET in the chipscale MICRO FOOT package to feature backside insulation. The Si8422DB is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The 2-mil backside coating of the device insulates the top of the MICRO FOOT package to electrical shorts from being created by temp...

Vishay has introduced a compact SMD IR receiver optimized for sensor and light barrier systems. With its fast reaction times, insensitivity to supply voltage ripple and EMI noise, and low supply current of 0.85 mA typical at 5 V, the fixed gain device provides consistent performance in all ambient light conditions.

Vishay Intertechnology has announced two compact panel potentiometers with high dielectric strength of 5000 VRMS, cermet and conductive plastic elements, and a wide variety of modules and terminal styles.

Vishay Intertechnology has announced a new high-temperature 1W surface-mount Power Metal Strip resistor that is said to be the industry's first current sensing resistor in the 2010 case size to operate over a temperature range of –65°C to +275°C. The WSLT2010...18 resistor features a very low 10-mΩ to 500-mΩ resistance value range, a tight tolerance down to ±0.5%, and low TCR values down to ±75 ppm/°C.

Vishay has broadened its optoelectronics portfolio with the introduction of a 3mm (T1) infrared emitter with performance characteristics comparable to leading 5mm emitters. The new VSLB3940 940-nm infrared emitter features an on-axis radiant intensity of 65 mW/sr and optical power of 40 mW at 100 mA — which represents about an 8% performance improvement over the larger, 5-mm TSAL6200 in a 40% smaller form factor.

Vishay Intertechnology has broadened its optoelectronics portfolio with the introduction of a family of 940-nm surface-mount infrared (IR) emitters featuring significantly higher radiant intensity over standard emitter technologies.

Vishay Intertechnology has announced the industry’s first 190-V n-channel power MOSFET plus co-packaged 190-V power diode with a compact 2-mm by 2-mm footprint and an ultra-thin 0.75-mm profile. Offered in the PowerPAK SC-70 package, the SiA850DJ is also the industry’s first such device with an on-resistance rating at1.8-V VGS.

Vishay Intertechnology has announced a IHLP low-profile, high-current inductor in the 2020 case size. The compact IHLP-2020BZ-11 offers an ultra-low 2.0-mm profile, with a wide inductance range and low DCR.

Vishay Intertechnology has released a series of high-intensity white power SMD LEDs in the CLCC-2 flat ceramic package to offer InGaN/TAG on sapphire technology. Designed to reduce costs in high-volume applications, the VLMW84.. devices offer low thermal resistance of 25 K/W and high optical power from 5600 mcd to 14000 mcd.

Vishay Intertechnology has announced a new IHLP low-profile, high-current inductor in the 2020 case size. The compact IHLP-2020CZ-11 offers an ultra-low 3.0-mm profile, with a wide inductance range and low DCR.

Vishay Intertechnology has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the industry’s lowest on-resistance for their device types in the SO-8 footprint.

Vishay Intertechnology has announced a 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

Vishay Intertechnology has added to its family of current limit protection load switches with the release of a new protected high-side load switch that can operate under a supply voltage range of 2.4 V to 5.5 V and handle a continuous output current of 1 A.

Vishay Intertechnology has expanded its family of Gen III TrenchFET power MOSFETs with the release of two 20-V and two 30-V n-channel devices that are the first to offer TurboFET technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45%, enabling significantly lower switching losses and faster switching.

Vishay Intertechnology has announced that its TR8 molded MicroTan tantalum chip capacitor was honored with an EDN China Innovation Award in the Passive Component, Connector, and Sensor category. Vishay received the award at a ceremony held on November 6 at the Jinjiang Shenzhen Airlines Hotel in Shenzhen, China. Accepting the award on behalf of Vishay was Tommy Cheng, Tantalum/MLCC Field Application Manager.

Vishay Intertechnology has broadened its optoelectronics portfolio with the introduction of an 870-nm SMD infrared emitter with the industry’s lowest forward voltage and highest radiant intensity of any such device in the PLCC2 package.

Vishay has expanded its family of Gen III TrenchFET power MOSFETs with the release of a new 20-V n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK SO-8 package type.