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190-V N-Channel Power MOSFET Plus 190-V Co-Packaged Power Diode

8th January 2009

Vishay

ES Admin

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Vishay Intertechnology has announced the industry’s first 190-V n-channel power MOSFET plus co-packaged 190-V power diode with a compact 2-mm by 2-mm footprint and an ultra-thin 0.75-mm profile. Offered in the PowerPAK SC-70 package, the SiA850DJ is also the industry’s first such device with an on-resistance rating at1.8-V VGS.

Typical applications for the SiA850DJ will include boost dc-to-dc converters for high-voltage piezo-electric motors and organic LED (OLED) backlighting in portable devices such as cell phones, PDAs, MP3 players, and smart phones.

Integrating the MOSFET and the power diode into the same package saves designers at least one third of the PCB area, while at the same time lowering solution costs by eliminating the need for an external diode. While larger devices feature on-resistance ratings down to 2.5 V, the SiA850DJ is rated down to 1.8 V, which further saves board space by reducing the need for level shift circuitry. The device offers low on-resistance values from 17 O at 1.8-V VGS to 3.8 V at 4.5-V VGS, and a diode forward voltage of 1.2 V at 0.5 A.

The SiA850DJ is 100% lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the new SiA850DJ are available now, with lead times of 10 to 12 weeks for larger orders.