20-V N-Channel Power MOSFET Plus Schottky Diode

12th December 2008

Vishay

ES Admin

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Vishay Intertechnology has announced a 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

As portable electronics become more compact, the size of components becomes critical. With its ultra-compact footprint, the SiB800EDK is 36% smaller than devices in 2-mm by 2-mm packages, while offering an ultra-thin 0.75-mm profile. The integration of two components into one package not only saves space, but the inclusion of a trench Schottky keeps the forward voltage low, reducing voltage drop in level shift applications.

The SiB800EDK offers low on-resistance values from 0.960 Ω at 1.5-V VGS to 0.225 Ω at 4.5-V VGS. The low on-resistance rating at 1.5 V allows the MOSFET to be used with signals at low levels.

Typical applications for the new device will include level shift switching in I2C interface and boost converters in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones.

The SiB800EDK features ESD protection, and is 100% lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.