N-Channel TrenchFET Gen III Power MOSFETs from Vishay

3rd December 2008

Vishay

ES Admin

0 0

Datasheet

Vishay Intertechnology has expanded its family of Gen III TrenchFET power MOSFETs with the release of two 20-V and two 30-V n-channel devices that are the first to offer TurboFET technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45%, enabling significantly lower switching losses and faster switching.

The 20-V SiS426DN device offers the industry’s lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 mΩ-nC at 4.5 V and 117.60 mΩ-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive.

Compared to the closest competing devices, these specifications represent a reduction in gate charge of 45% at 4.5 V and 36% at 10 V, and a 50% lower FOM. Lower gate charge translates into more efficient switching at all frequencies, and in particular gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in dc-to-dc converters.

Vishay’s 30-V TurboFET offering includes the new Si7718DN in the PowerPAK 1212-8, and the Si7784DP in the PowerPAK SO-8. Both MOSFETs offer typical gate charge of 13.7 nC at 4.5 V and 30 nC at 10 V, and on-resistance times gate charge FOMs of 112.34 mΩ-nC at 4.5 V and 180 mΩ-nC at 10 V. A PowerPAK SO-8 version of the 20-V SiS426DN device, the SiR496DP, is also available for high-current applications. All devices released today are halogen-free and 100% Rg and UIS tested.

The devices will be used as the high-side MOSFET in synchronous buck converters, helping to save power in notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion.