20 and 30V P-Channel TrenchFET Power MOSFETs from Vishay

While the available competing devices with these voltage ratings in the SO-8 footprint offer on-resistance only down to 24 mΩ, the Si7633DP offers an ultra-low on-resistance of 3.3 mΩ at 10 V and 5.5 mΩ at 4.5 V. These values are 27% lower at 10 V, and 28% lower at 4.5 V than the closest competing 30-V device, and 28% and 15% lower, respectively, than the closest competing 25-V SO-8 device. The 30-V Si7135DP offers an on-resistance of 3.9 mΩ at 10 V and 6.2 mΩ at 4.5 V. These values are 13% lower at 10 V, and 19.5% lower at 4.5 V than the closest competing device.

Packaged in the PowerPAK SO-8, both MOSFETs allow for a 60% higher maximum drain current and 75 % higher maximum power dissipation than devices in the SO-8 package.

The devices will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are always on and drawing current. The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges.

Vishay has also released the Si4459ADY 30-V p-channel TrenchFET power MOSFET in the SO-8 package. The device offers an on-resistance of 5 mΩ at 10 V and 7.75 mΩ at 4.5 V. All devices released today are 100% Rg- and UIS-tested and halogen-free.

Samples and production quantities of the new Si7135DP and Si7633DP TrenchFET power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.