Innovative Silicon Inc
Innovative Silicon Inc Articles
Daniel LaBouve is VP of Engineering at Innovative Silicon
Innovative Silicon Inc. (ISi), the developer of Z-RAM high density memory intellectual property, today announced that Daniel LaBouve has joined the company as vice president of engineering. Reporting to ISi CEO, Mark-Eric Jones, LaBouve will be responsible for managing and building the company’s engineering team and driving product development programs.
Innovative Silicon’s Z-RAM Receives IEEE Spectrum Magazine’s Winning Technology Endorsement
SANTA CLARA, Calif., January 04, 2007— Innovative Silicon Inc. (ISi), the developer of Z-RAM® high density memory intellectual property (IP), announces it has been profiled as a winner in the semiconductor category in IEEE Spectrum Magazine’s January 2007 issue. Each year the publication selects just five companies as “winners” and five others as “losers.”
Innovative Silicon Announces new VP
Innovative Silicon Inc. (ISi), has announced that Jeff Lewis has joined the company as VP of Marketing. Based in the company’s U.S. Headquarters, Lewis is charged with managing the company’s marketing and business development programs.
ISi Announces Silicon Validation of Z-RAM Technology
Innovative Silicon Inc. (ISi), the developer of Z-RAM™ high density memory IP, has announced that it has achieved silicon validation of Z-RAM memory arrays on 90nm SOI process technologies. The company also announced that it has validated its memory bitcell (which requires only one transistor and zero capacitors) in an additional 10 fabrication processes that include 130nm SOI, 90nm SOI, and FinFET technologies. The company expects to demonstr...
AMD licenses embedded memory from Innovative Silicon
Innovative Silicon Inc. (ISi), the developer of Z-RAM™ (Zero Capacitor DRAM) high density memory IP, has announced that Advanced Micro Devices, Inc. (NYSE:AMD) has contracted to purchase a Z-RAM embedded memory technology license for potential use in its future microprocessor products.
Zero capacitor memory technology proved realisable on FinFET/TriGate device geometries
In a paper given by Innovative Silicon Inc. (ISi) at the recent IEEE SOI Conference, the company claims to prove the manufacturability of its Z-RAM (zero capacitor) embedded memory technology in FinFET and TriGate devices with geometries below 45nm.
Innovative Silicon Announces Worldwide Marketing Chief
Innovative Silicon Inc.,known for its Z-RAM™ high density memory IP, has appointed Jeff Lewis as VP of Marketing.