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Innovative Silicon Inc Articles
Innovative Silicon’s Z-RAM Technology Meets Low Voltage and Bulk Silicon Requirements of DRAM Memory Manufacturers
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor, floating body (FB) memory technology, today announced two major breakthroughs to its Z-RAM technology. First, bit cell operating voltage has been reduced to below one volt (1V), making it the industry’s lowest-voltage FB memory bit cell and the first to be on-par with traditional DRAM voltages. Second, Z-RAM technology is now constructed on bulk silicon – without the req...
Les Z-RAM d’Innovative Silicon répondent aux attentes des fabricants de mémoires en terme de tension et de substrat
Innovative Silicon, Inc. (ISi), développeur des mémoires Z-RAM® à corps flottant et sans capacité, annonce deux avancées majeures de sa technologie. Premièrement, la tension de fonctionnement des cellules mémoires a été ramenée à moins de un volt (1 V), ce qui en fait la cellule mémoire à corps flottant de plus basse tension de l’industrie, et la première à égaler sur ce point les DRAM traditionnelles.
Innovative Silicon To Present Floating Body Memory Array Results At ISSCC
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology has announced the upcoming delivery of a presentation titled “A 2ns-Read-Latency 4MB Embedded Floating Body Memory Macro in 45nm SOI Technology” in collaboration with AMD at the International Solid State Circuits Conference (ISSCC).
Innovative Silicon Unveils Z-RAM Memory Technology Breakthroughs
Innovative Silicon has demonstrated that its Z-RAM memory technology continues to show considerable advantages over DRAM implementations and other proposed floating body memory designs. Dr. Mikhail Nagoga, a principal member of ISi’s technical staff, presented a paper written by Dr. Serguei Okhonin, chief scientist at ISi, that describes the smallest silicon dynamic memory devices ever reported, with the largest programming window. Separatel...
Innovative Silicon’s Jeff Lewis Named Senior Vice President of Marketing and Business Development
Innovative Silicon has announced the promotion of Jeff Lewis to the new position of senior vice president of marketing and business development. Lewis, a 20-year veteran in the semiconductor IP industry, has been instrumental in ISi’s growth since joining in January 2006, initially as vice president of marketing and most recently as vice president of marketing and product operations. As senior vice president of marketing and business developm...
Innovative Silicon Names Michael Van Buskirk Senior VP
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology, today announced that renowned memory innovator and pioneer Michael Van Buskirk has joined the company as senior vice president of engineering and operations. He is charged with overseeing the continued development of the company’s Z-RAM memory technology and deploying it to customer licensees. Van Buskirk directly reports to Mark-Eric Jones,...
Innovative Silicon named a top finalist in Swiss Economic Forum Awards
Innovative Silicon, Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology, today announced that it was one of the top finalists in the Swiss Economic Forum’s 2008 Awards. Now in its 10th year, the Swiss Economic Forum is a two-day gathering of 1200 leading figures from industry, commerce, politics and academia. Held on May 22 and 23 in Thun, Switzerland, the event provided a discussion forum for international busine...
Innovative Silicon Wins Prestigious Audemars Piguet “Changing Times Award”
Innovative Silicon Inc. (ISi), the developer of Z-RAM high-density memory intellectual property (IP), has announced that it has won the Audemars Piguet 2007 “Next Gem” award, one of three awards within the Audemars Piguet “Changing Times Award” program. The “Next Gem” award is given to the private company with the most promising future of making the biggest impact, on the largest number of people, in the least amount of time.
ISi Receives Distinguished Technology Pioneer 2008 Award by World Economic Forum
Innovative Silicon Inc. (ISi) ), the developer of Z-RAM high-density memory intellectual property (IP), today announced that the World Economic Forum (The Forum) selected ISi as a Technology Pioneer 2008. The company is one of 39 visionary companies that were named Technology Pioneers. The Technology Pioneers 2008 were nominated by the world’s leading technology experts, including venture capitalists, technology companies, academics and media....
Innovative Silicon Secures $25M in Series C Funding
Innovative Silicon Inc. (ISi), the developer of Z-RAM ultra-dense memory intellectual property (IP), announced today that Wellington Partners Venture Capital has joined with all existing investors to lead a $25M Series C round of investment in the company. ISi will use the financing to expand its engineering and customer support initiatives worldwide.
Innovative Silicon Names Virginia Picci VP of Finance and Administration
Innovative Silicon Inc. (ISi), the developer of Z-RAM high-density memory intellectual property (IP), today announced that it has named Virginia Picci vice president of finance and administration. Picci, a four year veteran of the company, brings more than 20 years of experience to ISi and is well poised to oversee the financial responsibilities of the firm.
Innovative Silicon’s David Fisch to Present on Z-RAM Memory Scalability at IWFIT 2007
Innovative Silicon Inc.(ISi), the developer of Z-RAM high-density memory intellectual property, has announced that David Fisch, director of product architecture, will present a paper on Zero Capacitor RAM (Z-RAM) and its scalability path to 32-nm and beyond. The talk will take place at 11 a.m. on Wednesday, September 5, at the 7th International Workshop of Future Information Technology (IWFIPT) in Dresden, Germany.
Hynix Semiconductor Licenses ISi’s Z-RAM Memory Technology for DRAM Products
Innovative Silicon Inc., the developer of Z-RAM high-density memory intellectual property, and Hynix Semiconductor Inc. today announced that Hynix has agreed to license ISi’s Z-RAM for use in its DRAM chips. Z-RAM-based DRAMs will use a single transistor bitcell – rather than a combination of transistors and capacitor elements – representing the first fundamental DRAM bitcell change since the invention of the DRAM in the early 1970s. Hynix...
Innovative Silicon Joins Cadence OpenChoice IP Program
Innovative Silicon (ISi), the developer of Z-RAM® ultra-dense memory intellectual property (IP), announced today that it has joined the Cadence Design Systems Inc. OpenChoice IP Program. The program is designed to ease the process of integrating IP, such as ISI’s Z-RAM, into SoC designs.
Innovative Silicon Names Paul Pickering VP of Worldwide Sales
Innovative Silicon (ISi), the developer of Z-RAM ultra-dense memory intellectual property, announced today the appointment of Paul Pickering to vice-president of worldwide sales. Reporting to ISi CEO, Mark-Eric Jones, Pickering brings to ISi a strong sales background from market-leading semiconductor companies such as Fairchild, Toshiba, LSI Logic and PMC-Sierra.
Innovative Silicon Receives Red Herring 100 Europe 2007 Award
Innovative Silicon (ISi), the developer of Z-RAM ultra-dense memory intellectual property (IP), announced today that it has received the prestigious Red Herring 100 Europe 2007 award, which recognizes Europe’s 100 “most promising” companies driving the future of technology.
Innovative Silicon’s Z-RAM Named Number One Emerging Technology at ESC Electronics Award Gala
Innovative Silicon Inc. (ISi), the developer of Z-RAM ultra-dense memory intellectual property (IP), announced that its technology was named the number one winning technology by IEEE Spectrum Magazine readers. The award was presented to ISi during the Embedded Systems Conference in San Jose yesterday at the Third Annual Creativity in Electronics Award Gala that celebrated creators of technology. IEEE Spectrum readers were asked to choose among ...
Z-RAM Ultra-Dense Memory Now Backed by 21 Patents
Innovative Silicon (ISi), the developer of ZRAM high density memory intellectual property has announced that it has been awarded its 21st patent, and has another 43 more patent applications pending worldwide. For 2007, to date, the company has already been granted four U.S. patents for low power consumption, data storage and other important contributions related to its memory technology. The newest patent numbers include 7,170,807; 7,187,581; ...
Innovative Silicon Inc in ESC's Disruption Zone
Innovative Silicon (ISi), the developer of Z-RAM high-density memory intellectual property (IP), announced today that it has been selected to exhibit in the Disruptive Zone in booth 3068B at next week's Embedded Systems Conference (ESC) Silicon Valley, April 3-5 at the San Jose McEnery Convention Center. The new Disruption Zone showcases only 16 companies whose products are slated to change the future of the embedded industry with groundbreakin...
2006 North American Frost & Sullivan Award for Product Innovation Presented to Innovative Silicon
The 2006 Frost & Sullivan Product Innovation Award in the field of silicon-on-insulator (SOI) technology was presented to Innovative Silicon Inc. for the invention of the capacitorless memory device that overcomes the limitation in scaling dynamic random access memory (DRAM) for future memory needs.