Efficient Power Conversion Corporation
Efficient Power Conversion Corporation Articles
eGaN FETs enable DC/DC solutions for ultra-thin, high-density computing
EPC has announced the availability of the eGaN FETs EPC9148 and EPC9153 demonstration boards for 48V DC/DC conversion. The EPC9153 is a 250W, extremely thin, power module using a simple, low-cost synchronous buck configuration delivering a 98.2% peak efficiency with a maximum component height of 6.5mm.
Performance versus silicon MOSFETs rises with 100V eGaN FET family
Efficient Power Conversion has advanced the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs. The applications for these devices include synchronous rectification, class-D audio, infotainment systems, DC/DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.
eGaN FETs close the gap further on silicon MOSFETs
The EPC2215 and EPC2207 are the latest generation of 200V eGaN FETs from Efficient Power Conversion (EPC). Both double the performance of the earlier generation of 200V eGaN FETs while being half the size to save valuable real estate on some of the most demanding and space-sensitive applications.
DC/DC converter modules increases computing efficiencies
A demonstration board combines Microchip’s DSCs and EPC’s eGaN FETs to raise power density and efficiency in DC conversion. The brick DC/DC converter targets data centres, telecomms and automotive applications.
Going for GaN in converter designs
A high power 1/16th brick converter using GaN FETs could increase maximum load current in 1/16th brick converter designs, compared with MOSFET designs
EPC reveals presence at PCIM Europe Digital Days
The team from Efficient Power Conversion (EPC) will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, (July 7 – 8).
EPC Space targeting radiation hardened power electronics
Efficient Power Conversion (EPC) and VPT have announced the establishment of EPC Space, a joint venture focused on designing and manufacturing radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.
Podcast on GaN transistors and integrated circuits
Efficient Power Conversion (EPC) Corporation has posted an update to its popular ‘How to GaN’ video podcast series. These updated videos are based on the recently published third edition textbook, ‘GaN Transistors for Efficient Power Conversion’.
Power stage IC family is based on eGaN FET technology
The EPC2152 is a monolithic 80V, 12.5A power stage IC for 48V DC/DC conversion in high-density computing, motor drives for e-mobility and Class D audio applications.
Demonstration board uses eGaN FETS to develop ToF in automotive applications
Time of flight (ToF) relies on fast and accurate object detection. In automotive design, it is used in lidar systems for safety systems in advanced driver assisted systems (ADAS).
Go-ahead for GaN
It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow, Efficient Power Conversion
eGan FET wins AEC Q101 qualification
EPC has been achieved successful AEC Q101 qualification of its 15V EPC2216 eGaN FET. It is designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.
GaN textbook with power conversion applications focus
Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of ‘GaN Transistors for Efficient Power Conversion’, a textbook written by power conversion industry experts and published by John Wiley and Sons. It is designed to provide power system design engineering students, as well as practising engineers, basic technical and application-focused information on how to design more efficient power conversio...
GaN technology is transforming medicine
GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine
AEC-qualified FETs exploit GaN technology for autonomous vehicles
The EPC2206, and EPC2212 eGaN FETs by Efficient Power Conversion (EPC) are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 and 100V DS ratings respectively. They have received AEC Q101-qualification and will be joined by more discrete transistors and ICs designed for the harsh automotive environment, says the company.
Two eGaN discrete transistors are qualified to AEC Q101 for automotive use
Two eGaN discrete transistors are qualified to AEC Q101 for automotive applications, announces Efficient Power Conversion (EPC). The company believes the certification brings its eGaN technology to vehicle design.
GaN transistor is x20 smaller than silicon option
Efficient Power Conversion (EPC) claims that its 350V eGaN power transistor is 20 times smaller than the comparable silicon. This makes it suitable for use in multi-level converters, for EV charging, solar power inverters and motor drives.
GaN-based development board reduces power supply size
A five-phase development board by Efficient Power Conversion (EPC) demonstrates the reduction in size and the enhanced efficiency for power conversion that can be achieved using high frequency switching eGaN power transistors, says the company.
GaN transistor shrinks by a factor of eight compared with MOSFETs
A 40V gallium nitride (GaN) power transistor from Efficient Power Conversion (EPC) is eight times smaller than equivalently-rated MOSFETS.
Board reduces development time in evaluating eGaN
Efficient Power Conversion (EPC) has announced the EPC9086 half-bridge development board with a 30V eGaN and Peregrine Semiconductor's gate driver.