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Efficient Power Conversion Corporation

Efficient Power Conversion Corporation Articles

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News & Analysis
9th July 2024
US ITC confirms EPC Patents and infringement by Innoscience

Efficient Power Conversion (EPC), a rapidly growing and innovative company, announces that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months.

Power
22nd March 2023
ePower stage ICs boost power density and simplify design

EPC announces the introduction of two new 100V power stage ICs rated at 15 A (EPC23104) and 25 A (EPC23103). The two devices join the 100V 35A power stage IC EPC23102 offered by EPC.

Power
18th January 2023
Design higher density and lower cost lidar systems with new laser driver IC's

Efficient Power Conversion (EPC) introduces EPC21701, an 80V laser driver IC capable of 15A pulsed current for ToF lidar applications including vacuum cleaners, robotics, 3D security cameras and 3D sensing

Products
16th November 2022
Latest GaN FET doubles power density in small form factor, says EPC

GAN power FET and IC provider, Efficient Power Conversion (EPC) launches the EPC2619, its latest GaN FET.

Power
13th May 2022
The lowest on-resistance 100 V GaN FET shipping from Efficient Power Conversion

AT PCIM Europe, Efficient Power Conversion Corporation announced the expansion of a selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET.

Power
10th January 2022
12V – 48V 500 W GaN boost converter demonstration

The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.

Power
20th December 2021
65A ePower Chipset from Efficient Power Conversion

Efficient Power Conversion (EPC) has introduced the ePower Chipset family that integrates 100 V GaN driver and FETs up to 65 A .

Products
3rd November 2021
EPC launches 2 kW, 48 V/12 V DC-DC mild-hybrid cars

The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units 

Products
25th October 2021
eGaN FET-based boost converter reduces losses

Based on EPC’s eGaN FET, the EPC9162 is a bi-directional buck or reverse-boost converter for laptop and PC monitor backlighting.

Power
11th June 2021
Radiation-hardened gallium nitride transistors launched

EPC has announced the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.

Power
28th May 2021
Power conversion demo board delivers high power density

EPC has announced the availability of the EPC9149, a 1kW-capable 48V input to 12V output LLC power conversion demo board that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40V EPC2024 GaN FETs.

Power
17th May 2021
Scalable DC/DC demo board powered by GaN FETs

EPC announces the availability of the EPC9137, a 1.5kW, two-phase 48 to 12V bidirectional converter that operates with 97% efficiency in a very small footprint. The design of this demo board is scalable; that is, two converters can be paralleled to achieve 3kW or three converters can be paralleled to achieve 4.5kW. The board features four EPC2206 100V eGaN FETs and is controlled by a module that includes the Microchip dsPIC33C...

Power
4th May 2021
Motor drive demonstration powered by gallium nitride

EPC has announced the availability of the EPC9146, a 400W motor drive demonstration. The EPC9146 power board contains three independently controlled half bridge circuits, featuring the EPC2152 monolithic ePower Stage with integrated gate driver, 80V maximum device voltage, 15A (10 ARMS) maximum output current.

Events News
19th April 2021
EPC to showcase high power density eGaN FETs at PCIM

The EPC team has announced that it will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3rd to 7th. 

Power
29th March 2021
eToF laser driver ICs optimised for augmented reality

EPC has announced the introduction of an eToF laser driver that integrates a 40V, 10A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.

Power
17th March 2021
Lidar demonstration boards drive 220A current lasers

Efficient Power Conversion  (EPC) has announced the availability of the EPC9150, a 200V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical.

Power
8th March 2021
65V eGaN FET enables higher resolution for lidar systems

EPC has announced AEC Q101 qualification of the 65V EPC2219 designed for lidar systems in the automotive industry and other harsh environments.

Power
10th February 2021
Demo board makes GaN as easy to use as silicon

EPC has announced the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33x22.9x9mm. The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48V input to 12V regulated output conversion at 25A. 

Power
4th February 2021
GaN for high density servers

The performance of GaN devices in 48V applications extends their use to high performance servers.  

Power
25th January 2021
Project eGaN device lifetime in Phase-12 report

EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

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