Efficient Power Conversion Corporation
Efficient Power Conversion Corporation Articles
12V – 48V 500 W GaN boost converter demonstration
The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.
65A ePower Chipset from Efficient Power Conversion
Efficient Power Conversion (EPC) has introduced the ePower Chipset family that integrates 100 V GaN driver and FETs up to 65 A .
EPC launches 2 kW, 48 V/12 V DC-DC mild-hybrid cars
The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units
eGaN FET-based boost converter reduces losses
Based on EPC’s eGaN FET, the EPC9162 is a bi-directional buck or reverse-boost converter for laptop and PC monitor backlighting.
Radiation-hardened gallium nitride transistors launched
EPC has announced the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
Power conversion demo board delivers high power density
EPC has announced the availability of the EPC9149, a 1kW-capable 48V input to 12V output LLC power conversion demo board that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40V EPC2024 GaN FETs.
Scalable DC/DC demo board powered by GaN FETs
EPC announces the availability of the EPC9137, a 1.5kW, two-phase 48 to 12V bidirectional converter that operates with 97% efficiency in a very small footprint. The design of this demo board is scalable; that is, two converters can be paralleled to achieve 3kW or three converters can be paralleled to achieve 4.5kW. The board features four EPC2206 100V eGaN FETs and is controlled by a module that includes the Microchip dsPIC33C...
Motor drive demonstration powered by gallium nitride
EPC has announced the availability of the EPC9146, a 400W motor drive demonstration. The EPC9146 power board contains three independently controlled half bridge circuits, featuring the EPC2152 monolithic ePower Stage with integrated gate driver, 80V maximum device voltage, 15A (10 ARMS) maximum output current.
EPC to showcase high power density eGaN FETs at PCIM
The EPC team has announced that it will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3rd to 7th.
eToF laser driver ICs optimised for augmented reality
EPC has announced the introduction of an eToF laser driver that integrates a 40V, 10A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.
Lidar demonstration boards drive 220A current lasers
Efficient Power Conversion (EPC) has announced the availability of the EPC9150, a 200V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical.
65V eGaN FET enables higher resolution for lidar systems
EPC has announced AEC Q101 qualification of the 65V EPC2219 designed for lidar systems in the automotive industry and other harsh environments.
Demo board makes GaN as easy to use as silicon
EPC has announced the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33x22.9x9mm. The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48V input to 12V regulated output conversion at 25A.
GaN for high density servers
The performance of GaN devices in 48V applications extends their use to high performance servers.
Project eGaN device lifetime in Phase-12 report
EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.
DC/DC buck converters for performance eMotorsport
BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC/DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN) FET transistors.
eGaN FET for high power density solutions
Efficient Power Conversion has advanced the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is suited for applications with demanding requirements for performance in space-constrained form factors including USB-C batter chargers and ultra-thin point-of-load (POL) converters.
EPC strengthens European Sales Team
To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) has announced the appointment of Stefan Werkstetter as Director, Sales EMEA.
eGaN FETs enable DC/DC solutions for ultra-thin, high-density computing
EPC has announced the availability of the eGaN FETs EPC9148 and EPC9153 demonstration boards for 48V DC/DC conversion. The EPC9153 is a 250W, extremely thin, power module using a simple, low-cost synchronous buck configuration delivering a 98.2% peak efficiency with a maximum component height of 6.5mm.
Performance versus silicon MOSFETs rises with 100V eGaN FET family
Efficient Power Conversion has advanced the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs. The applications for these devices include synchronous rectification, class-D audio, infotainment systems, DC/DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.