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Efficient Power Conversion Corporation

Efficient Power Conversion Corporation Articles

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Power
7th April 2020
Podcast on GaN transistors and integrated circuits

Efficient Power Conversion (EPC) Corporation has posted an update to its popular ‘How to GaN’ video podcast series. These updated videos are based on the recently published third edition textbook, ‘GaN Transistors for Efficient Power Conversion’.

Power
18th March 2020
Power stage IC family is based on eGaN FET technology

The EPC2152 is a monolithic 80V, 12.5A power stage IC for 48V DC/DC conversion in high-density computing, motor drives for e-mobility and Class D audio applications.

Power
10th January 2020
Demonstration board uses eGaN FETS to develop ToF in automotive applications

  Time of flight (ToF) relies on fast and accurate object detection. In automotive design, it is used in lidar systems for safety systems in advanced driver assisted systems (ADAS).

Power
20th November 2019
Go-ahead for GaN

  It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow, Efficient Power Conversion

Analysis
16th October 2019
eGan FET wins AEC Q101 qualification

EPC has been achieved successful AEC Q101 qualification of its 15V EPC2216 eGaN FET. It is designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.

Power
8th October 2019
GaN textbook with power conversion applications focus

Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of ‘GaN Transistors for Efficient Power Conversion’, a textbook written by power conversion industry experts and published by John Wiley and Sons. It is designed to provide power system design engineering students, as well as practising engineers, basic technical and application-focused information on how to design more efficient power conversio...

Power
12th August 2019
GaN technology is transforming medicine

  GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine  

Power
21st January 2019
AEC-qualified FETs exploit GaN technology for autonomous vehicles

  The EPC2206, and EPC2212 eGaN FETs by Efficient Power Conversion (EPC) are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 and 100V DS ratings respectively. They have received AEC Q101-qualification and will be joined by more discrete transistors and ICs designed for the harsh automotive environment, says the company.

Power
2nd May 2018
Two eGaN discrete transistors are qualified to AEC Q101 for automotive use

  Two eGaN discrete transistors are qualified to AEC Q101 for automotive applications, announces Efficient Power Conversion (EPC). The company believes the certification brings its eGaN technology to vehicle design.

Power
26th April 2018
GaN transistor is x20 smaller than silicon option

  Efficient Power Conversion (EPC) claims that its 350V eGaN power transistor is 20 times smaller than the comparable silicon. This makes it suitable for use in multi-level converters, for EV charging, solar power inverters and motor drives. 

Power
8th March 2018
GaN-based development board reduces power supply size

  A five-phase development board by Efficient Power Conversion (EPC) demonstrates the reduction in size and the enhanced efficiency for power conversion that can be achieved using high frequency switching eGaN power transistors, says the company.

Power
3rd January 2018
GaN transistor shrinks by a factor of eight compared with MOSFETs

A 40V gallium nitride (GaN) power transistor from Efficient Power Conversion (EPC) is eight times smaller than equivalently-rated MOSFETS.

Power
30th October 2017
Board reduces development time in evaluating eGaN

  Efficient Power Conversion (EPC) has announced the EPC9086 half-bridge development board with a 30V eGaN and Peregrine Semiconductor's gate driver.

Power
4th October 2017
Demonstration kits show versatility of AirFuel-resonant power transfer

  Efficient Power Conversion (EPC) has released two demonstration kits, the EPC9127 and EPC9128, that show GaN FETs and ICs can be used in resonant wireless power transfer systems.

Power
11th August 2017
GaN FETs demonstrate AirFuel wireless charging

 A demonstration kit from Efficient Power Conversion (EPC) targets Class 4 AirFuel Alliance-compatible wireless power for wireless charging and is based on the company's eGaN FETs.

Power
20th January 2017
Evaluation board demonstrates LiDAR in automotives

To demonstrate how eGaN FETs can drive laser diodes to enhance LiDAR measuring systems used in vehicles for accuracy and processing speed, Efficient Power Conversion offers the EPC9126.

Power
26th January 2016
Development boards help to evaluate 200V GaN transistors

Designed to enable power systems engineers quickly evaluate the efficiency achieved with 200V GaN (gallium nitride) transistors in class-E amplifiers, current-mode class D, and push-pull converters operating up to 30MHz, Efficient Power Conversion (EPC) has released three GaN-based differential mode development boards.

Power
18th September 2015
FET packs power into a small footprint for wireless transfer

The EPC2039 is compact and competitively priced for wireless power transfer and other high frequency applications, says Efficient Power Conversion (EPC).

Design
24th June 2013
Efficient Power Conversion Introduces 96% Efficient, 1 MHz Buck Converter Demonstration Board

Efficient Power Conversion introduces the EPC9107, a fully functional buck power conversion demonstration circuit. This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter. It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments.

Design
12th April 2013
Efficient Power Conversion Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride FETs

Efficient Power Conversion introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride field effect transistor in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

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