A 40V gallium nitride (GaN) power transistor from Efficient Power Conversion (EPC) is eight times smaller than equivalently-rated MOSFETS.

  Efficient Power Conversion (EPC) has announced the EPC9086 half-bridge development board with a 30V eGaN and Peregrine Semiconductor's gate driver.

  Efficient Power Conversion (EPC) has released two demonstration kits, the EPC9127 and EPC9128, that show GaN FETs and ICs can be used in resonant wireless power transfer systems.

 A demonstration kit from Efficient Power Conversion (EPC) targets Class 4 AirFuel Alliance-compatible wireless power for wireless charging and is based on the company's eGaN FETs.

To demonstrate how eGaN FETs can drive laser diodes to enhance LiDAR measuring systems used in vehicles for accuracy and processing speed, Efficient Power Conversion offers the EPC9126.

Designed to enable power systems engineers quickly evaluate the efficiency achieved with 200V GaN (gallium nitride) transistors in class-E amplifiers, current-mode class D, and push-pull converters operating up to 30MHz, Efficient Power Conversion (EPC) has released three GaN-based differential mode development boards.

The EPC2039 is compact and competitively priced for wireless power transfer and other high frequency applications, says Efficient Power Conversion (EPC).

Efficient Power Conversion introduces the EPC9107, a fully functional buck power conversion demonstration circuit. This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter. It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments.

Efficient Power Conversion introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride field effect transistor in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

Efficient Power Conversion today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride field effect transistors. This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.

Efficient Power Conversion Corporation today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride field effect transistors. This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.