Efficient Power Conversion Corporation
Efficient Power Conversion Corporation Articles
Evaluation board demonstrates LiDAR in automotives
To demonstrate how eGaN FETs can drive laser diodes to enhance LiDAR measuring systems used in vehicles for accuracy and processing speed, Efficient Power Conversion offers the EPC9126.
Development boards help to evaluate 200V GaN transistors
Designed to enable power systems engineers quickly evaluate the efficiency achieved with 200V GaN (gallium nitride) transistors in class-E amplifiers, current-mode class D, and push-pull converters operating up to 30MHz, Efficient Power Conversion (EPC) has released three GaN-based differential mode development boards.
FET packs power into a small footprint for wireless transfer
The EPC2039 is compact and competitively priced for wireless power transfer and other high frequency applications, says Efficient Power Conversion (EPC).
Efficient Power Conversion Introduces 96% Efficient, 1 MHz Buck Converter Demonstration Board
Efficient Power Conversion introduces the EPC9107, a fully functional buck power conversion demonstration circuit. This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter. It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments.
Efficient Power Conversion Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride FETs
Efficient Power Conversion introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride field effect transistor in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
Efficient Power Conversion Announces Upgrade of Development Board
Efficient Power Conversion today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride field effect transistors. This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.
Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN FETs
Efficient Power Conversion Corporation today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride field effect transistors. This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.