Ampleon

Address:
Marketing Communication Manager Ampleon, Building BY 3.088, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Netherlands

Phone: +31 6 208 14 771

Web: http://www.ampleon.com


Ampleon articles

Displaying 1 - 20 of 21

RF power technology innovations at IMS 2019

RF power technology innovations at IMS 2019
At the IEEE International Microwave Symposium (IMS) held in Boston, Massachusetts, USA, Ampleon announced it will participate in order to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defence, NCC, ISM, cooking and defrosting applications.
3rd June 2019

Rugged RF power LDMOS transistor for ISM applications

Rugged RF power LDMOS transistor for ISM applications
The first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of the proven 9th generation high voltage LDMOS process technology, has been released by Ampleon. The process has been developed to enable the implementation of extremely rugged transistors with operating voltages of up to 65V.
9th May 2019

Efficient power transistor enables compact amplifier designs

Efficient power transistor enables compact amplifier designs
A high-efficiency 750W RF power transistor has been announced by Ampleon, with the BLF0910H9LS750P, which has a high efficiency of 72.5% at 915MHz and a rugged design. The device operates at frequencies from 902MHz to 928MHz making it suitable for use in industrial, scientific, and medical systems, as well as for professional cooking applications.
8th April 2019


High power RF transistor targets a range of energy applications

High power RF transistor targets a range of energy applications
Designed for pulsed and CW applications operating in the 2,400 to 2,500MHz frequency range, the 500W BLC2425M10LS500P LDMOS RF power transistor has been announced by Ampleon. Suitable for use in a wide range of cooking RF energy applications, the BLC2425M10LS500P has an excellent high-power to footprint ratio as it delivers 500W CW from a single SOT1250 air cavity plastic package.
16th January 2019

Compact dual-stage module eases integration complexity

Compact dual-stage module eases integration complexity
  The compact dual-stage 250W LDMOS RF power module BPC2425M9X2S250-1 has been announced by Ampleon. Designed for high power continuous wave (CW) industrial, scientific and medical (ISM) applications operating in the 2,400 to 2,500MHz frequency band, the high efficiency module measures 72x34mm.
5th November 2018

Power transistor delivers efficiency of better than 62%

Power transistor delivers efficiency of better than 62%
The BLF13H9L750P, a 750 Watt Gen9HV LDMOS RF power transistor, launched by Ampleon at European Microwave Week, is designed specifically for use in particle accelerator applications operating in the 1.3 GHz spectrum.
25th September 2018

EuMW 2018: RF power transistor withstands a VSWR of 65:1

EuMW 2018: RF power transistor withstands a VSWR of 65:1
A high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 – 108 MHz frequency range was unveiled at European Microwave Week in Madrid (September 25-27). Operating from an industry standard 50V power source the BLF189XRA delivers over 1,600W (CW).
24th September 2018

RF power products centre stage at EuMW 2018

RF power products, as well as technical expertise in high-power RF design will be presented by Ampleon at European Microwave Week in Madrid (September 25-27). The company will support the popular Student School during the event by providing a platform to share innovation in the field of high-power semiconductors using Ampleon devices.
23rd August 2018

Rugged 250W transistor delivers 69% energy efficiency

Rugged 250W transistor delivers 69% energy efficiency
Ampleon has announced an addition to its line-up of high power LDMOS RF transistors suitable for use in Continuous Wave (CW) RF energy applications. The BLC2425M10LS250 power transistor is highly efficient, achieving up to 69% efficiency and is capable of providing up to 250W output power in the 2,400-2,500 MHz frequency range.
18th July 2018

First Gen9HV transistor for UHF broadcast applications

First Gen9HV transistor for UHF broadcast applications
Ampleon has announced the introduction of its BLF989 RF power transistor designed for UHF broadcast applications such as DVBT and UHF analog TV. Using Ampleon’s latest Gen9HV high voltage LDMOS process, this 140W (average – 700W peak) transistor, the first broadcast device to use this process technology, offers a high operating efficiency of typically > 34% (Class AB) and is available in a ceramic SOT539 package format either with or without mounting ears.
7th June 2018

High efficiency amplifier requires less input signal to achieve 200W

High efficiency amplifier requires less input signal to achieve 200W
Ampleon has announced the 200W BPC10M6X2S200 LDMOS-based power amplifier module suitable for use in a variety of plasma lighting, industrial heating, medical and RF cooking and defrosting applications. Operating in the 423-443MHz frequency range, this compact light weigh pallet measures just 125x33mm, weighs 85g and can operate in pulsed or continuous wave modes.
11th April 2018

Compact transistor delivers 600W for RF energy applications

Compact transistor delivers 600W for RF energy applications
  The launch of the 600W BLF0910H9LS600 LDMOS power amplifier transistor has been announced by Ampleon. This is the first RF energy transistor using Ampleon’s latest Gen9HV 50V LDMOS process, a node that has been optimised to deliver greatly increased efficiency, power and gain.
9th February 2018

Doherty amplifiers debut at European Microwave Week

Innovative RF power products and experts in high-power RF design will be on hand to demonstrate the capabilities of the complete Ampleon product line-up at European Microwave Week 2017 in Nuremberg (Oct 8-12). The company will also present technical papers in various sessions.
25th September 2017

Devices use Gen9HV 50V base station optimised process

Devices use Gen9HV 50V base station optimised process
Ampleon has announced the launch of a series of LDMOS RF power transistors using its Gen9HV 50V LDMOS process. These devices are the first to use Ampleon’s latest 50V process, a node that has been optimised for use in cellular infrastructure applications up to 1GHz and delivers greatly increased efficiency and gain. These devices, enabling more than 57% efficiency and 18 dB power gain, and their 50V operation, make for a significantly more compact and cost-effective application.
7th June 2017

Ampleon opens RF Energy Competence Center in Hefei

Ampleon opens RF Energy Competence Center in Hefei
Ampleon announced the opening of its RF Energy Competence Center in Hefei, PRC. The company is recognised as a leader in the RF Energy market and continues to invest in the emerging use of this technology. While RF energy covers a broad range of applications (Domestic and Professional Cooking, Heating and Drying, Ignition and Lighting), the new competence center’s current focus is on solid state cooking.
20th October 2016

Ampleon extends line up of Gen 9 transistors and pallets

Ampleon extends line up of Gen 9 transistors and pallets
Ampleon announced the availability of a complete line-up of RF power transistors and pallets based on the latest Gen 9 LDMOS process technology. Available power levels include 50 W drivers up to 400 W finals. Aimed at a broad range of S band radar for pulsed RF applications, the enhanced power density attributes of Gen 9 meet the specific needs of the aerospace and defense industry for size, weight, power, plus cost and reliability or SWaP – CR.
4th October 2016

1900 W LDMOS power transistor added to rugged line-up

1900 W LDMOS power transistor added to rugged line-up
Ampleon announced the BLF189XR, the latest member of its renowned family of extremely rugged “XR” LDMOS power transistors designed specifically for use in high power amplifiers operating in the 10 – 500 MHz. Suiting use in a wide variety of broadcast and industrial applications, and capable of operating with a VSWR up to 65:1, the device is rated to deliver 1,700 W CW or 1,900 W pulsed.
3rd October 2016

Ampleon showcases latest innovations at IMS

Ampleon showcases latest innovations at IMS
Ampleon has announced details of its participation at the forthcoming IEEE MTT International Microwave Symposium (IMS) held in San Francisco 22 – 27th May, 2016. On display at booth 2149 will be the latest innovations in power amplifier solutions for mobile broadband applications, Doherty amplifiers for use in broadcast and new product concepts such as pallets for S-band radar applications. Also showcased will be products housed in thermally optimised packages addressing industrial and medical applications.
22nd April 2016

Ampleon showcases RF energy innovations at EDI CON

Ampleon announced its participation at the forthcoming Electronic Design Innovation Conference - EDI CON – held in Beijing between 19th to 21st April, 2016. At their booth, number 607, Ampleon will showcase demonstrations of a plasma light module developed by Luma in collaboration with Ampleon and, a new recently announced solid state oven developed by Midea in collaboration with Ampleon, in addition to a number of GaN and LDMOS RF power transistor applications.
7th April 2016

GaN RF power transistors come in 10 to 200W ratings

GaN RF power transistors come in 10 to 200W ratings
Ampleon has announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10, 30, 50 and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100 and 200W push-pull packages for use in final stages up to S band.
15th December 2015


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