RF transistor protects against extreme mismatches

15th November 2021
Caroline Hayes

Based on LDMOS process technology, the BLC10G27XS-400AVT 400W asymmetric Doherty RF power transistor is designed for use in basestation multi-carrier applications operating in the 2.496 to 2.690GHz range. It uses Ampleon's ninth generation 28V LDMOS process technology.

The transistor is supplied in an air cavity plastic (ACP) earless SOT-1258-4 package and typically delivers a drain efficiency of 45%.

The product is also rugged, with VSWR (voltage standing wave ratio) up to 10:1. This is considered essential for basestation applications where high power extreme mismatch conditions can often occur, observes the company. The transistor has integrated ESD protection and low output capacitance that improves Doherty performance. Internal input and output impedance transformation enables user-friendly PCB matching to 50Ω. The power gain specification is typically 13.3dB based on quoted test conditions. Additionally, the Dohery rectifier has low thermal resistance attributes to contribute to thermal stability in demanding basestation applications.

Design support resources available include a recommended driver, the BLM9D2327S-50PB, an LDMOS two-stage integrated Doherty MMIC (monolithic microwave IC) and the PCB layout for a Doherty production test circuit.

Application notes, simulation models, and an RF power transistor lifetime calculator can be found on the company’s website.

Ampleon is based in the Netherlands and the BLC10G27XS-400AVT is now available from approved distributors, RFMW, a specialist in RF and microwave semiconductors, connectors, and components, and Digi-Key, the international electronics components distributor.

Ampleon specialises in RF power products for the 4G LTE and 5G NR infrastructure, and serves industrial, scientific, medical, broadcast, aerospace, and defence market sectors.

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