EuMW 2019: LDMoS and GaN solutions promenade in Paris
During European Microwave Week 2019 in Paris, Ampleon will participate in the exhibition, present several technical papers and sponsor the European Microwave Student Design Competition Thrust 2 “Wideband Power Amplifier Biasing Network Design” element.
On its stand, (B470), Ampleon will showcase a wide variety of new LDMOS and GaN solutions targeting 5G networks, aerospace and defence, non-cellular communications, industrial, scientific, medical, cooking and defrosting applications Highlights include:
- Solutions for Mobile Broadband and 5G networks, offering the industry’s best compromise between efficiency, cost and size
- New 65V and 50V Advanced Rugged Transistors (ART) in ceramic and plastic packages designed to unlock so far untapped levels of extreme ruggedness and ultra-high breakdown voltages
- Easy-to-use 30-700W broadband and matched GaN transistors, enabling highest efficiency architectures without sacrificing performance
- Industry leading 433MHz, 915MHz and 2.4GHz transistors, pallet modules and multi-kilowatt system reference designs tailored for industrial, cooking and defrosting applications
- LDMOS radar transistors based upon 9th generation technology which is pushing the limit of LDMOS power density to enable best-in-class efficiency figures at a well-optimised cost structure
As well as the booth showcases and sponsorship, key Ampleon staff will present a number of technical papers during the course of the event including:
Sergio Pires, Advanced Concepts and Systems Group Leader,
WS-02 (EuMC/EuMIC) - RF Techniques for 5G Applications
Title: Developing and testing 5G PAs; from the cable to OTA
Date: Sunday, September 29, 2019, Time: 08:30 – 17:50 Room: 741BC
Marek Schmidt-Szalowski, Modelling Engineer
EuMIC09: Modelling and Extraction Techniques
Title: Energy-based capacitance modelling for field-effect transistor stability analysis
Date: Monday, September 30, 2019, Time: 16:10, Room E01
Ali Isik, RF Design Engineer
EuMIC12 Interaction Session 1
Title: Experimental Analysis of In-package harmonic Manipulations with a 160W GaN HEMT Power bar
Date: Tuesday, October 1, 2019, Time: 0830-10.10
Jarod Geng, Senior Principal RF Engineer
MicroApps Theatre, (oral presentation)
Title: A Waveform Alignment Technique Enabling Broadband GaN Power Amplifier Design
Date: Tuesday, October 1, 2019, Time: 16:40
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