Silicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance.
Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.
Gallium nitride, a wide band gap semiconductor, is rapidly displacing silicon as the material of choice for power transistors.
With superior material properties and simplicity of use, GaN technology allows designers to set new standards for efficiency, power density, size and weight.
The GaN & SiC for Power Electronics Tech Hub is the latest in Richardson RFPD’s selection of Tech Hubs.
