onsemi introduces GaNEXUS gallium nitride power portfolio

onsemi introduces GaNEXUS gallium nitride power portfolio onsemi introduces GaNEXUS gallium nitride power portfolio

onsemi announced the launch of its GaNEXUS gallium nitride (GaN) power portfolio, with the initial sampling of GaNEXUS FETs across voltage ranges from 40 to 650V as well as its GaNEXUS Smart 650V GaN FETs. The portfolio is ideally suited for power-hungry applications including AI data centre power delivery, 48V systems, robotics and industrial automation, and energy infrastructure.

The addition of GaNEXUS to onsemi’s intelligent power portfolio expands the company’s ability to deliver optimised power solutions across a range of applications, voltage domains, and performance requirements. As part of onsemi’s broader power portfolio alongside silicon and EliteSiC technologies, GaNEXUS gives customers greater flexibility to optimise performance, efficiency, thermal behaviour, and total system cost across the full power-delivery architecture.

As AI infrastructure, electrification, industrial automation, and energy systems continue to increase demand for more efficient and compact power architectures, designers are facing growing challenges around energy consumption, thermal management, and system size. AI data centres alone are expected to consume up to 9% of US electricity generation by 2030, with power and cooling costs accounting for up to 40% of the total data centre operating expenses.

GaNEXUS addresses these challenges by enabling faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared to conventional silicon-based solutions. These advantages allow customers to reduce the size of magnetics and cooling systems while improving overall system efficiency and responsiveness and lowering system cost in applications ranging from AI data centre power delivery and electric vehicle charging to robotics and industrial power systems.

“Our GaNEXUS portfolio is enabling new architectures for power system design,” said Antoine Jalabert, Vice President of the GaN Division at onsemi. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”

GaNEXUS solutions are engineered to improve how modern power systems convert and manage energy. When paired with onsemi’s Treo Platform for integrated sensing, control, protection, and power-management, GaNEXUS can deliver complete system-level power solutions that are smarter, more reliable, and more robust. This system-level approach helps customers simplify design complexity, accelerate development and qualification, reduce thermal and cooling requirements, and optimise performance across the full power delivery chain.

In low- and medium-voltage systems, including AI server 48V intermediate bus converter (IBC) and battery backup units (BBU) and motor drives, GaNEXUS enables:

  • ~30–60% smaller magnetics
  • ~1.5x–2x higher power density
  • ~0.5–2% efficiency improvement, depending on topology
  • Reduced switching losses, improved thermal performance and control stability

In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables:

  • Up to ~60% reduction in magnetics size in high-frequency AC-DC and resonant stages
  • ~1.5x–2x higher power density in PFC, LLC, and HV DC-DC architectures
  • ~0.5–1% efficiency gains with meaningful thermal and operating-cost impact at scale
  • Lower losses reduce thermal stress in compact, high-power systems
  • GaNEXUS Smart reduces system risk and simplifies power stage design for faster qualification and higher confidence

GaNEXUS devices feature thermally enhanced packages with industry-standard footprints for dual sourcing, like TOLL Bottom Cooling, TOLT Top Cooling, and dual cooling 3.3 x 3.3mm and 5 x 6mm packages.

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