Three-phase gate driver IC from International Rectifier

The IRS26310DJPbF integrates power MOSFET and IGBT gate drivers with three high-side and three low-side referenced output channels to provide 200mA/350mA drive current at up to 20 V MOS gate drive capability operating up to 600 V. The new IC incorporates an integrated bootstrap diode and offers a comprehensive set of protection features including improved negative voltage spike (Vs) immunity to protect the system from catastrophic events seen during high-current switching and short-circuit conditions to achieve high levels of robustness and reliability. An advanced input filter is also integrated to reject noise and reduce distortion to improve system performance.

Application-specific protection features include DC bus sensing with over-voltage protection and a zero vector braking function for PM motor drives. A current trip function which terminates all six outputs is derived from an external current sense resistor and an enable function is available to terminate all six outputs simultaneously.

The device’s output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

The new IC utilizes IR’s advanced high-voltage IC (HVIC) process which incorporates next-generation high-voltage level-shifting and termination technology to deliver superior electrical over-stress protection and higher field reliability. In addition to the over-current and over-temperature detection input, the IRS26310D features under-voltage lock-out protection, integrated deadtime protection, shoot-through protection, a shutdown input, fault-reporting, and is compatible with 3.3V input logic.