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Power MOSFETs in Compact SC-70 Package Offer Half the Size of TSOP-6

5th June 2008

Vishay

ES Admin

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Vishay Intertechnology has announced the release of 15 new power MOSFETS in a PowerPAK SC-70 package measuring 2mm by 2mm with a low 0.8-mm profile. The new offering includes a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The devices feature voltage ranges between 8V and 30V with extremely low on-resistance values down to 0.011Ω at 4.5V.

As portable devices become smaller, and as functionality increases, their available board space becomes more limited. Designers are forced to find smaller solutions, while at the same time maintaining low power consumption to keep batteries running as long as possible between charges.

To meet this need, the PowerPAK SC-70 combines the tiny footprint of the SC-70 package with on-resistance comparable to the larger TSOP-6. The result is a solution with very low power consumption in a package that is 50% smaller than the TSOP-6 and 27% thinner. In addition to helping the environment by saving energy, the PowerPAK SC-70 is 100% lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Typical applications for Vishay Siliconix PowerPAK SC-70 MOSFETs will include load switching and battery charging in portable devices such as cell phones, PDAs, digital cameras, and MP3 players, as well as notebook computers, portable HDDs, and miniature motor drives.

The devices released today include the SiA413DJ, which is the industry's first 12-V single p-channel device in this package size. The SiA913DJ and SiA912DJ are the first 12-V dual p- and n-channel MOSFETs, respectively, while the SiA511DJ is the first 12-V n-channel and p-channel complementary pair.

Several of the devices set new records for on-resistance in the SC-70 footprint. With a rating of 0.056Ω at 4.5V, the new SiA421DJ has the lowest on-resistance in the 30-V single p-channel category. At 0.053Ω, the SiA914DJ offers the industry's lowest on-resistance for a 20-V dual p-channel MOSFET. Two of the new products features on-board, low-VF Schottky diodes. Rated at 0.053Ω, the SiA810DJ offers the lowest on-resistance for a 20-V single n-channel plus Schottky device, while the 0.094-Ω SiA811DJ achieves the same distinction for a 20-V single p-channel plus Schottky.

The SiA413DJ and SIA411DJ MOSFETs feature on-resistance ratings down to 1.5-V VGS, enabling low power consumption and saving board space by reducing the need for level shift circuitry. Previously released devices in the PowerPAK SC-70 include the SiA414DJ, SiA417DJ, and SiA419DJ with on-resistance ratings down to 1.2-V VGS. The 0.011-Ω SiA414DJ and 0.023-Ω SiA417DJ are additionally the first devices in this package type with an 8-V breakdown voltage rating.