Infineon Makes 2nd Generation of its ThinQ! Silicon Carbide Schottky Diodes Available in Fully Isolated TO-220 FullPAK Package

Uniquely, the new TO220 FullPAK devices show a similar junction-to-heatsink thermal resistance as the standard non-isolated TO-220 devices. This is accomplished by using patented diffusion soldering technique from Infineon, which strongly reduces the “chip-to-leadframe” thermal resistance and effectively compensates for the FullPAK´s internal isolation layer. Infineon offers the 600V FullPAK portfolio in current ratings from 2A to 6A, making it the industry´s broadest portfolio of SiC diodes in this package type.

Silicon Carbide (SiC) is a revolutionary material for power semiconductors, with physical properties that far outperform Si power devices. Key features are a benchmark switching behavior, no reverse recovery, virtually no temperature influence on the switching behavior and a standard operating temperature of -55°C to 175°C. Main application areas for SiC Schottky diodes are active Power Factor Correction (PFC) in Switched Mode Power Supplies (SMPS) and other AC/DC and DC/DC power conversion applications such as solar inverters and motor drives. The FullPAK portfolio is perfectly suited for power supply application in flat panel displays (LCD/PDP) and computers.

Infineon was the world's first provider of SiC Schottky diodes, introducing its first products in 2001. During the last years, Infineon has made a number of significant improvements to its SiC Schottky diode technology in areas such as surge current stability, switching performance, product cost and packaging, extending the benefits of SiC technology. The SiC Schottky diodes are offered in 600V and 1200V.