Home > Pending > Half-Bridge 600 and 1200V IGBT Modules With High Current Ratings from 75 to 200A

Pending

Half-Bridge 600 and 1200V IGBT Modules With High Current Ratings from 75 to 200A

14th March 2008

Vishay

ES Admin

0 0

Vishay Intertechnology has launched a series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The series consists of eight 600-V and 1200-V devices that offer a variety of technologies for high hard switching operating frequencies in standard and Ultrafast speeds.

The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the, GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Generation 5 non-punch-through (NPT) technology for the added benefit of 10-μs short circuit capabilities.

The GA100TS60SFPbF and GA200HS60S1PbF are standard-speed devices optimized for hard switching operating frequencies up to 1kHz. The other six IGBTs are Ultrafast modules co-packaged with HEXFRED ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The Ultrafast devices are designed for high operating frequencies from 8kHz to 60kHz in hard switching, and >200kHz in resonant mode.

Featuring high current ratings from 75A to 200A with low power losses, Vishay's new IGBT series is optimized for isolated and non-isolated converters, switches, inverters, and choppers in high-frequency industrial welding, UPS, SMPS, solar inverter, and motor drive applications. For output inverter TIG welder applications, the IGBTs offer the lowest Vce(on) at rated current available in the market for S series modules.

The new IGBTs are lead (Pb)-free and provide simple, direct mounting to the heatsink. The devices offer low EMI for less snubbing, and provide very low junction to case thermal resistance.