New power conversion products are nowadays developed focussing on highest efficiency especially for solar inverter applications. An economic utilization is achieved by using advanced power module technologies. Dedicated for solar applications, power module topologies with paralleled MOSFETs and IGBTs secure efficiency improvements.

Efficiency is becoming increasingly important in power electronics. Many applications are driven by the initiatives for reduced energy consumption.

Mitsubishi Electric introduces five new gallium arsenide (GaAs) power amplifiers which are mainly intended for use in PC data communication terminals for UMTS and LTE cellular networks at frequencies between 800 and 1980MHz.

Mitsubishi Electric is introducing a new 9.0” color TFT-LCD module AA090AA01 in Quarter High Definition (QHD: 960 × 540) format. QHD provides half the resolution of full high definition (Full HD: 1,920 × 1,080) screens both horizontally and vertically.

Mitsubishi Electric is introducing its new 5.7” QVGA color TFT-LCD module for industrial use. The product AA057QD01 is equipped with a built-in LED driver in a slim and lightweight LCD module design and Light Emitting Diode (LED) backlight, providing a longer lifetime and enhanced efficiency.

Mitsubishi Electric is introducing its new 5.7” QVGA color TFT-LCD module for industrial use. The product AA057QD01 is equipped with a built-in LED driver in a slim and lightweight LCD module design and Light Emitting Diode (LED) backlight, providing a longer lifetime and enhanced efficiency.

Mitsubishi Electric is introducing its new 19.2” color TFT-LCD module for 16:3 ratio images (1920 x 360 pixels) offering a broad range of wide-format display and design solutions. The product AA192AA01 will be equipped with a built-in LED driver and white Light Emitting Diodes (LED) backlights, providing a longer lifetime and excellent performance as well as an inverter-less design, and will be available through Mitsubishi Electric sales sites....

Mitsubishi Electric is introducing three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W output powers, for L to C band (0.5~ 6.0 GHz) amplifiers. The three devices are designed for use in base stations for mobile phones, very small aperture terminals and other transmission equipment.

Mitsubishi Electric is introducing its new 12.1” wide-XGA color TFT-LCD modules for industrial use. The product AA121TD01 is equipped with a built-in LED driver in a slim and lightweight LCD module design and Light Emitting Diode (LED) backlight, providing a longer lifetime and enhanced efficiency.

Mitsubishi Electric is introducing a new red laser diode, dubbed the ML520G72. It offers the world’s highest output power compared to all laser diodes in the 638nm wavelength region and so it is perfectly suited to pico projector applications or other portable display systems requiring a red light source with high brightness. The ML520G72’s output power of 500mW helps with the design of high-luminous LD-based projectors and can provide a lumi...

Mitsubishi Electric is introducing a new red laser diode, dubbed the ML520G72. It offers the world’s highest output power compared to all laser diodes in the 638nm wavelength region and so it is perfectly suited to pico projector applications or other portable display systems requiring a red light source with high brightness. The ML520G72’s output power of 500mW helps with the design of high-luminous LD-based projectors and can provide a lumi...

Mitsubishi Electric is introducing its new 17.5” and 14.1” wide-XGA color TFT-LCD modules for industrial use. The products AA175TD01 and AA141TC01 will be equipped with white Light Emitting Diode (LED) backlights, providing a longer lifetime and enhanced efficiency, and will be available through Mitsubishi Electric sales sites.

Mitsubishi Electric Corporation's GaN HEMT power amplifiers are exclusively designed for use in satellite applications in the 3.7-4.2GHz band. Depending on the individual device the output power of these transistors ranges from 2 to 100 Watt .

Mitsubishi Electric has launched the new V1-Series as part of the IPM (Intelligent Power Module) line-up. V1-Series is a new intelligent power module which is mainly developed to increase the efficiency of motor drives and power supplies like DC/DC converters. The V1-Series IPM is focussing on applications in the two digit kW- class offering a respective line-up of 200A/300A/450A in 1200V and 400A/600A in 600V.

Mitsubishi Electric Corporation is introducing its new “PV Series” of intelligent power modules (IPMs), which is mainly intended for use in residential photovoltaic (PV) inverters. The six different modules which are also well-suited for inverters in fuel cell systems, are integrated in packages with a footprint of just 90mm x 50mm.

Infineon Technologies AG and Mitsubishi Electric Corporation, agreed to establish a service agreement by which they will both serve the industrial motion controls and drives market worldwide as sources for the advanced IGBT module packages SmartPACKs and SmartPIMs. This revolutionary package concept, recently developed by Infineon Technologies, will be available with the latest generation of power chip technologies from the two leaders.

Mitsubishi Electric is introducing an Evaluation Board for its Intelligent Power Modules (IPMs) of the entire L1/S1 Series. The new board named EVBL1S1XX enable the design engineer to functionally test the features and the performance of these IPMs from Mitsubishi Electric. The board can be used as a reference design regarding layout and selected components.

Mitsubishi Electric Corporation is introducing a new InGaP HBT power amplifier, the MGFS38E2527, which is specifically targeted towards WiMAX subscriber terminal applications such as PC cards and customer premises equipment. The new module offers a high output power of 28.5dBm, which is 1.5dB higher than the output power of its predecessor, the MGFS36E2527.

Mitsubishi Electric Corporation has introduced a new plastic packaged GaAs HEMT (High Electron Mobility Transistor), which is suitable for low noise amplifiers in the Ka frequency Band. This device, named the MGF4963BL, operates at frequencies up to 20GHz with excellent low noise performance. The new chip is integrated into a cost-effective plastic package, as often systems are under cost constraints and so a traditional ceramic packaged part wou...

Mitsubishi has introduced the MGF4921AM, a low noise GaAs HEMT (High Electron Mobility Transistor) that is highly suitable for low noise amplifiers in satellite digital radio receivers as well as in DBS (direct broadcast satellite) receivers operating in the C band. The new device works from S to C bands with a typical noise figure of just 0.35dB at 2.4 or 4GHz, which is at the leading edge of the industry. At 2.4GHz it provides a gain of 18.0dB.