Analysis

New GaN HEMTs for L to C Band Amplifiers by Mitsubishi Electric

28th September 2010
ES Admin
Mitsubishi Electric is introducing three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W output powers, for L to C band (0.5~ 6.0 GHz) amplifiers. The three devices are designed for use in base stations for mobile phones, very small aperture terminals and other transmission equipment.
The new models feature high output power, high efficiency and high voltage operation with output amplifiers of 10W, 20W and 40W. They have a power added efficiency of about 50% (at 2.6 GHz) and a high voltage operation of 47W. All three devices are integrated into a 4.4mm by 14.0mm small package which helps to reduce the required mounting surface in amplifiers.

In the past, gallium arsenide (GaAs) transistor technology was commonly used for microwave transmitters. Now gallium nitride is gathering attention due to its high breakdown voltage and high saturated electron speed. In March 2010, Mitsubishi Electric became the first company in the world to manufacture fully space qualified GaN HEMTs for C band space applications. HEMT devices that use GaN have higher power density, which helps to save energy and contributes to making transmitters more compact and light weight. Furthermore, they offer an increased operating lifetime.

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