Innoscience
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Innoscience Articles
Innoscience launches 80mΩ RDS(on) 650V GaN HEMTs
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, announced a new low RDS(on) 650V E-mode GaN HEMT device.
8-inch GaN-on-Si IDM to debut at Electronica
nnoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will play a full and active role at the upcoming Electronica exhibition.
Innoscience, Finepower agree distribution pact
Innoscience Technology has signed a distribution agreement with Finepower, an engineering and distribution company focused on power electronic applications with operations in Germany and China.
Series 8 – Episode 4 – GaN technology and its rapidly growing range of applications
Paige West talks with Denis Marcon, General Manager of Innoscience Europe about GaN technology, its importance, the GaN device technology that Innoscience offers and the material’s future.
Innoscience opens a sales and design centre in Korea
Innoscience Technology, a company founded to create a global energy ecosystem based on low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has opened an office in Gwangmyeong, near Seoul, Korea, to provide technical and marketing services to the country’s consumer and automotive market.
WPG, Innoscience ink global distribution pact
Innoscience Technology, a supplier of high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with WPG Holdings (WPG), giving customers in all parts of the world access to Innoscience’s leading high and low voltage normally-off (enhancement mode) GaN HEMTs.
Innoscience delivers 40V bi-directional GaN HEMT
Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, has announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company's advanced InnoGaN technology which feature...
8-inch GaN-on-Si FET producer opens new locations
Innoscience Technology has announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is poised to support customers through the addition of design and sales support facilities in Santa Clara, California, and Leuven, Belgium.