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Innoscience

Innoscience Articles

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Power
27th February 2024
Innoscience launches low RDS(on) 650V transistors in TOLL package

Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced new, low RDS(on), high power devices to its family of 650V/700V enhancement-mode power transistors.

Latest
27th February 2024
Innoscience unveils 700V GaN HEMT ICs for simplified design

Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a family of four new integrated devices that combine power GaN HEMT, driver, current sense, and other functions within a single, industry-standard QFN 6 x 8mm package.

Events News
22nd February 2024
Innoscience at APEC 2024: new GaN ICs and datacentre tech

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, is attending the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.

Power
13th February 2024
Innoscience Launches 100V GaN IC for 48V/60V BMS

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family.

Power
11th December 2023
Innoscience launches low voltage HEMT family

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a new range of low voltage discrete HEMTs in FCQFN packaging.

Power
20th November 2023
Legrand integrates Innoscience GaN ICs in wall sockets

Innoscience Technology, dedicated to developing a worldwide energy ecosystem based on efficient, cost-effective gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced its collaboration with Legrand, a leading company in electrical and digital building infrastructures.

News & Analysis
16th October 2023
Innoscience signs European distribution deal with MEV Elektronik

Innoscience Technology has signed a Pan-European distribution agreement with Germany-headquartered MEV Elektronik Service GmbH.

News & Analysis
20th September 2023
Innoscience shipments of InnoGaN chips exceed 300 million pieces

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, energy efficient, and low loss product design.

Power
6th September 2023
Dr Denis Marcon of Innoscience to ‘destroy myths’ surrounding GaN

Innoscience Technology has announced that Dr Denis Marcon, General Manager, Innoscience Europe will address the audience at the International Semiconductor Executive Summit EU (ISES EU) Power conference with a paper entitled: ‘Mass manufacturing 8-inch GaN-on-Si power devices: the next generation of power switching technology’.

Latest
30th August 2023
Innoscience adds CODICO to European distribution network

Innoscience Technology has announced a distribution deal with CODICO, covering all European countries.

Latest
3rd July 2023
Innoscience bidirectional VGaN HEMTs employed by OnePlus

Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced that after OPPO and RealMe, the consumer electronics giant OnePlus is also using uses Innoscience’s bidirectional VGaN IC in the phone's battery protection board, inside the handset.

Power
5th June 2023
GaN breaks down design barriers

The performance advantages of GaN are well understood and the challenges of driving GaN HEMTs have been overcome. Remaining concerns may be price, availability and reliability, says Dr Denis Marcon, General Manager, Innoscience Europe.

News & Analysis
9th May 2023
Innoscience and University of Bern develop multilevel topology reference demo

Innoscience Technology has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience's 650V InnoGaN HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers, solar and industrial inverters, EV fast chargers, and potentially EV drivetrains.

Power
28th April 2023
Innoscience to demonstrate that GaN is the best power solution

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will continue to demonstrate its focus and 100% commitment to the burgeoning GaN market via a powerful presence at the upcoming PCIM conference and exhibition in Nuremberg, May 9th – 11th.

Boards/Backplanes
21st March 2023
Innoscience SolidGaN integrated half-bridge solution with driver

Innoscience Technology has launched the first in a new family of SolidGaN integrated GaN devices.

Events News
6th March 2023
Innoscience to demonstrate that GaN is all around us at APEC

Innoscience will be attending the upcoming Applied Power Electronics Conference (APEC) event in Orlando, Florida from 19th – 23rd March 2023 at the Orange County Convention Centre.

Power
15th December 2022
Innoscience leads global shipment of GaN Power devices

Innoscience Technology has demonstrated its ability to support high volume demand in GaN FETs globally, since it first started mass production on 8" wafer lines in 2019.

News & Analysis
30th November 2022
Innoscience signs global deal with Richardson RFPD

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with Richardson RFPD, an Arrow Electronics company.

Power
21st November 2022
Innoscience launches 80mΩ RDS(on) 650V GaN HEMTs

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, announced a new low RDS(on) 650V E-mode GaN HEMT device.

Power
3rd November 2022
8-inch GaN-on-Si IDM to debut at Electronica

nnoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will play a full and active role at the upcoming Electronica exhibition.

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