Innoscience
- United Kingdom
- http://www.innoscience.com
Innoscience Articles
Innoscience unveils new generation of BMS solutions
Innoscience Technology, developing cost-effective, high-performance gallium-nitride-on-silicon (GaN-on-Si) power solutions, has introduced a new generation of battery management system (BMS) solutions built on its proprietary VGaN technology.
Innoscience responds to latest Infineon lawsuits
Innoscience has firmly denounced the baseless accusations of patent infringement by Infineon Technologies AG.
EPC lawsuit update: Innoscience defeats ’508 Patent at ITC
Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has defeated the entirety of EPC’s ’508 patent in the initial determination at the ITC.
Innoscience show affordable GaN at PCIM 2024
Innoscience will demonstrate its position in the GaN market at the upcoming PCIM conference and exhibition (Nuremberg, June 11-13).
New INS1001DE GaN driver IC from Innoscience
Innoscience Technology has announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications.
EPC lawsuit update: Innoscience welcomes decisions made
Innoscience welcomes two decisions, from March 20, 2024, by the United States Patent and Trademark Office (USPTO) to institute review of the validity of the two remaining US patents, as asserted by Efficient Power Conversion Corporation (EPC) against Innoscience.
Response to Infineon’s lawsuit against Innoscience
Innoscience firmly denounces the accusations made by Infineon Technologies in a recent patent infringement lawsuit against three Innoscience entities.
Innoscience launches low RDS(on) 650V transistors in TOLL package
Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced new, low RDS(on), high power devices to its family of 650V/700V enhancement-mode power transistors.
Innoscience at APEC 2024: new GaN ICs and datacentre tech
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, is attending the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.
Innoscience Launches 100V GaN IC for 48V/60V BMS
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family.
Innoscience launches low voltage HEMT family
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a new range of low voltage discrete HEMTs in FCQFN packaging.
Legrand integrates Innoscience GaN ICs in wall sockets
Innoscience Technology, dedicated to developing a worldwide energy ecosystem based on efficient, cost-effective gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced its collaboration with Legrand, a leading company in electrical and digital building infrastructures.
Innoscience signs European distribution deal with MEV Elektronik
Innoscience Technology has signed a Pan-European distribution agreement with Germany-headquartered MEV Elektronik Service GmbH.
Innoscience shipments of InnoGaN chips exceed 300 million pieces
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, energy efficient, and low loss product design.
Dr Denis Marcon of Innoscience to ‘destroy myths’ surrounding GaN
Innoscience Technology has announced that Dr Denis Marcon, General Manager, Innoscience Europe will address the audience at the International Semiconductor Executive Summit EU (ISES EU) Power conference with a paper entitled: ‘Mass manufacturing 8-inch GaN-on-Si power devices: the next generation of power switching technology’.
Innoscience adds CODICO to European distribution network
Innoscience Technology has announced a distribution deal with CODICO, covering all European countries.
Innoscience bidirectional VGaN HEMTs employed by OnePlus
Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced that after OPPO and RealMe, the consumer electronics giant OnePlus is also using uses Innoscience’s bidirectional VGaN IC in the phone's battery protection board, inside the handset.
GaN breaks down design barriers
The performance advantages of GaN are well understood and the challenges of driving GaN HEMTs have been overcome. Remaining concerns may be price, availability and reliability, says Dr Denis Marcon, General Manager, Innoscience Europe.
Innoscience and University of Bern develop multilevel topology reference demo
Innoscience Technology has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience's 650V InnoGaN HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers, solar and industrial inverters, EV fast chargers, and potentially EV drivetrains.
Innoscience to demonstrate that GaN is the best power solution
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will continue to demonstrate its focus and 100% commitment to the burgeoning GaN market via a powerful presence at the upcoming PCIM conference and exhibition in Nuremberg, May 9th – 11th.