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Innoscience

Innoscience Articles

Displaying 1 - 9 of 9
News & Analysis
30th November 2022
Innoscience signs global deal with Richardson RFPD

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with Richardson RFPD, an Arrow Electronics company.

Power
21st November 2022
Innoscience launches 80mΩ RDS(on) 650V GaN HEMTs

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, announced a new low RDS(on) 650V E-mode GaN HEMT device.

Power
3rd November 2022
8-inch GaN-on-Si IDM to debut at Electronica

nnoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will play a full and active role at the upcoming Electronica exhibition.

News & Analysis
19th July 2022
Innoscience, Finepower agree distribution pact

Innoscience Technology has signed a distribution agreement with Finepower, an engineering and distribution company focused on power electronic applications with operations in Germany and China.

Podcasts
1st July 2022
Series 8 – Episode 4 – GaN technology and its rapidly growing range of applications

Paige West talks with Denis Marcon, General Manager of Innoscience Europe about GaN technology, its importance, the GaN device technology that Innoscience offers and the material’s future.

Power
28th June 2022
Innoscience opens a sales and design centre in Korea

Innoscience Technology, a company founded to create a global energy ecosystem based on low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has opened an office in Gwangmyeong, near Seoul, Korea, to provide technical and marketing services to the country’s consumer and automotive market.

News & Analysis
10th May 2022
WPG, Innoscience ink global distribution pact

Innoscience Technology, a supplier of high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with WPG Holdings (WPG), giving customers in all parts of the world access to Innoscience’s leading high and low voltage normally-off (enhancement mode) GaN HEMTs.  

Power
17th February 2022
Innoscience delivers 40V bi-directional GaN HEMT

Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, has announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company's advanced InnoGaN technology which feature...

Power
19th January 2022
8-inch GaN-on-Si FET producer opens new locations

Innoscience Technology has announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is poised to support customers through the addition of design and sales support facilities in Santa Clara, California, and Leuven, Belgium.

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