8-inch GaN-on-Si FET producer opens new locations

Founded in December2015, Innoscience is already the largest Integrated Device Manufacturer (IDM) that is fully focused on GaN technology, claims the company. The company has two wafer fabs including the world's largest dedicated 8-inch GaN-on-Si site, featuring the latest, advanced, high-throughput manufacturing equipment. Currently the company has a capacity of 10,000 8-inch wafers per month which will ramp up to 14,000 8-inch wafers per month later this year and 70,000 8-inch wafers per month by 2025. The company has a wide portfolio of devices from 30V to 650V and has shipped more than 35m parts for use in applications including USB PD chargers/adapters, data centres, mobile phones and LED drivers.

Innoscience produces high-performance, normally-off e-mode GaN FETs. By introducing a stress enhancement layer, the company has significantly reduced R_DS(on) without affecting other parameters including threshold voltage and leakage. Both epitaxy as well as device processing have been optimised to obtain high reproducibility and yield. Parts have passed quality and reliability tests in excess of JEDEC standards.

Comments Dr. Denis Marcon, General Manager, Innoscience Europe: "The time is right for GaN, and Innoscience is ready to supply the world. We will surpass anyone on price for an equivalent device and our huge manufacturing capacity means that our customers are assured of security of supply, which is often uppermost in people's minds given the shortage of chips at the moment. We look forward to working with any company in order to proliferate GaN throughout the global electronics industry."

Yi Sun, General Manager, Innoscience USA, explained: “This is an exciting time for our customers, who can benefit from Innoscience’s applications understanding and demo boards to develop their unique solutions. This will allow us to better support our customers in the USA, and in particular, the Bay area”.

It is expected both Innoscience offices will expand rapidly in the coming months and years, in order to strategically support Europe’s and the USA’s burgeoning market of GaN-on-Si power solutions.