The PMV16UN, one of the new N-Channel MOSFETs from NXP, delivers an ultra-low RDS(on) value of (18 mOhm max @VGS = 4.5 V) in SOT23.
NXP’s latest portfolio of small-signal MOSFETs offers a 20-percent increase in power efficiency compared to previous Trench MOSFET generation types.
Parts are available immediately for US $1.20 in units of 1,000.
A total of 70 types of small-signal MOSFETs will be released in 2011.
NXP Small-Signal MOSFETs Set New Benchmark in RDS(on)
NXP Semiconductors announced a new family of small-signal MOSFETs delivering breakthrough low RDS(on) performance. The low RDS(on) P-Channel and N-Channel MOSFETs enable lower power consumption for consumer electronics applications such as notebooks, tablets, handsets, e-readers, set-top-boxes and LCD TVs. These high-efficiency MOSFETs are available in high-volume SOT23 and SOT457 packages with a compact 3-mm x 3-mm footprint, allowing design engineers to replace larger package types with significantly smaller solutions offering similar or better on-resistance.