Frequency

High power switch features low insertion loss

16th October 2014
Mick Elliott

A high power PIN diode SP3T switch in a common anode configuration, operating from 30 MHz to 3 GHz is designed for military and civilian customers who require higher CW and pulsed power operation for radio applications. The MASW-011030 from MACOM is capable of handling 100W CW incident power at a base plate temperature of 85ºC, delivered in a single 7mm HWFN 16-lead plastic package.

The device is manufactured using MACOM’s hybrid manufacturing process featuring high voltage PIN diodes and passive devices and is a high power switch ideal for use on land mobile radio and MIL-COM applications that require higher power.

“The MASW-011030 is ideal for land mobile applications requiring high linearity, broadband performance and low loss” said Paul Wade, Product Line Manager, Standard Products. “This Symmetrical SP3T Multi-chip solution integrates the superior and reliable performance of Si PIN diodes into a small outline 7mm QFN package while providing superior thermal management through device exposed center paddle.” 

Covering 30 MHz to 3 GHz, this device delivers 40 dB isolation at 2 GHz with insertion loss of 0.35 dB and is 1B HBM ESD rated.

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