EuMW 2015: GaN RF transistors enable smaller radar units
Three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems were unveiled by Qorvo at European Microwave Week in Paris. The TGF2977-SM, TGF2978-SM, and TGF2979-SM are unmatched GaN transistors designed to operate in the 8-12GHz frequency band.
Qorvo's industry leading GaN technology paired up with the small packaging enables high linear gain and power efficiency. Qorvo's X-band power transistors will be available in fourth the quarter of calendar 2015.
"Qorvo is expanding GaN in low cost QFN plastic packaging to include X-band transistors for marine and avionics radar," said Roger Hall, Qorvo's general manager of Aerospace and Defense Products. "Radar manufacturers that are converting Magnetrons to solid state power amplifiers (SSPAs) and radar arrays can produce smaller, more efficient radar units as a result of GaN's size, weight and power efficiencies. They are also assured that Qorvo's best-in-class GaN solutions have met stringent heat and moisture stress testing so that the products will operate in harsh environments."
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