ROHM semiconductor to exhibit at PCIM 2016

13th April 2016
Posted By : Jordan Mulcare
ROHM semiconductor to exhibit at PCIM 2016

At the occasion of PCIM in Nuremberg from May 10-12th, 2016, ROHM Semiconductor showcase its latest power product novelties for high-speed switching and high power performance, at the same time meeting the need for greater energy savings and higher efficiency (Hall 9 - Booth 316).

Advanced power devices make a huge impact on power savings in all kinds of power systems turning them to a vital element in future technologies. Leading the development in all areas of Si and SiC (Silicon Carbide) power products and based on its complete inhouse supply change capacities, ROHM will present its state-of-the-art power devices.

Highlights:

  1. 3rdGen SiC Schottky Barrier Diodes(SBDs) for enhanced performance and reliability

Continuously developing its portfolio, ROHM will introduce its 3rd Gen SiC SBD for enhanced performance. The first of this kind are rated at 650V/6, 8, 10A and come in a TO220AC package. They realise lowest VF and lowest IR within the entire temperature range among all SiC SBDs available in the market. In addition to this, they feature high surge current capability which is suitable for Power Supply applications. As this 3rd Gen contains PN junction structure along with Schottky Barrier, durability in bipolar operation is also ensured. These features contribute to the ongoing trend of high efficiency, high power density and highly robust designs.

  1. 3rd Generation 1200V/180A Full SiC Module for most efficient high-frequency operation

ROHM has pioneered commercial power modules equipped with SiC-MOSFETs and SiC-SBDs. ROHM will present its SiC power module BSM180D12P3C007 rated at 1200V/180A. The Half-Bridge SiC module integrates mass-produced trench-type SiC MOSFETs and embedded SiC SBDs in the same footprint like previous modules. Based on the advanced UMOS structure, the new module achieves 77% lower switching loss than conventional IGBT modules and 42% lower Switching loss than SiC Modules utilising SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling system and peripheral components which in return results in greater energy savings and end-product miniaturisation.

   3. Stepper Motor Arduino Shield for easier design-ins in shorter timescales

In order to support the evaluation of its motor driver devices and to support, facilitate and accelerate customers’ design-ins, ROHM is going to launch an Arduino-based evaluation kit (EVK). Designed as a ‘shield’ to plug directly into the Arduino main board, this EVK allows engineers to rapidly evaluate and prototype stepper motor systems. It comes in 15 different variants for ROHM’s stepper motor driver ICs– from standard, micro step, low voltage to high voltage. This comprehensive solution covers supply voltages from 8 to 42V, enables up to 2.5A per phase, as well as micro-stepping and single- or multi-phase control of one or two stepper motors. The ‘easy to adapt’ EVK is supplied with a software library and example programmes to facilitate a rapid learning curve.


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