Exhibiting at PCIM Asia from the 24th-26th of June, GaN Systems will be showcasing the latest addition to its range of GaN high power transistors for the first time in China, at booth 4D18. The company is also demonstrating production models of real customer applications using its devices.
PCIM Asia is GaN Systems first major exhibition in China, which it expects to become an important market as GaN power transistors increasingly replace silicon semiconductors in power electronics. The 60A GaN high-power enhancement-mode device, the GS66516T, expands the company's range of power switching semiconductors, already the broadest product offering on the market with current ratings ranging from 8 to 250A.
Based on the company’s Island Technology die design, packaged in low inductance and thermally efficient GaNPX packaging, it also features new proprietary topside cooling technology. This enables it to be cooled using familiar and conventional heat sink or fan cooling techniques.
As GaN technology moves into mainstream production in markets ranging from consumer to industrial and clean tech, early adopters have already released products onto the market that take advantage of the companys innovative technology, which harnesses the superior fast switching performance of GaN and reduces power losses by up to 90%, resulting in smaller and far more efficient power electronics.
At the event, the company will be demonstrating a 650V, 30A, 3-phase inverter power module from LS Industrial Systems of Korea.
Executives and technical experts from GaN Systems are on the stand throughout the show to talk with customers about how to 'Get on board with GaN' and incorporate its devices into their consumer, enterprise, industrial and automotive systems.