High power wireless charging for autonomous robots is an essential component in Industry 4.0 and the promise is being realised today with solutions from WiBotic. Partnering with GaN Systems, WiBotic is providing ready, off-the-shelf solutions integral to charging the rapidly growing robotics ecosystem to deliver the power levels and increased antenna range that both drones and robots demand.
GaN Systems will demonstrate the 650V, 150A GaN power transistor - according to the company it is the industry’s highest current 650V GaN power transistor - at PCIM Europe in Nuremberg, Germany on 7th-9th May, 2019 at Booth 9-507. The GS-065-150 device has 100 times lower switching losses than comparable IGBTs - that’s two orders of magnitude less, a 99% reduction in switching losses.
GaN Systems has announced that its CEO Jim Witham will deliver a keynote at PCIM Europe, the leading international exhibition and conference for power electronics and its applications, in Nuremberg, Germany fromm 7-9th May 2019. Witham’s presentation, 'GaN and Industry 4.0 – A Small Change that is Revolutionising the Industry,' will be taking place Thursday 9th May 9 at 8:45am.
GaN Systems is displaying a wide breadth of design tools including new reference designs from partners at APEC 2019. Visitors to GaN Systems Booth 553 will find the multitude of design resources that make GaN easy to incorporate into numerous power system designs, thereby expediting customer go-to-market product releases.
GaN Systems has announced the availability of the GS-065 low current (3.5-11A) transistor line. The product suite, developed for sub-1kW power applications, is targeted for consumer level power supply products such as AC adapters for gaming and workstation laptops, TV power, LED lighting, wireless power systems, and appliance motor drives.
Eggtronic will showcase its technologies to the world’s biggest exhibition of consumer technologies, CES, where all next-generation innovations are introduced to the marketplace. CES, global stage for innovation with its 170.000 participants, is the world’s gathering place for all consumer electronics lovers. Eggtronic, an innovative Italian engineering company founded in Modena in 2012, will have its booth at the show.
GaN transistors from GaN Systems now extend to 120A, 650V. The GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives.
GaN Systems has announced the availability of a new evaluation board using what is supposedly the world’s fastest combination of GaN power transistors and power drivers. Combining what the company claims to be best-in-class GaN transistors with the fastest commercially available GaN transistor driver on the GS61004B evaluation board, the GS61004B-EVBDC evaluation platform is now available with the latest in high-speed GaN E-HEMT drivers from Peregrine Semiconductor.
Prior to building hardware, power system design engineers want to be fast, accurate and confident with their simulated designs. Achieving these goals with GaN designs has become easier with GaN Systems’ new set of LTSpice models. Increasing efficiency and power density requires proper layout and understanding of the characteristics of these fast transistors.
GaN Systems is doing anything but slow down this summer, as after APEC and PCIM, power engineers continue to be inundated with GaN product and industry developments. The number of application articles published about GaN transistors is increasing rather than waning.
At the Applied Power Electronics Conference - APEC 2017 - and the Power Conversion and Intelligent Motion conference - PCIM Europe 2017 - visitors saw the strides made by researchers and manufacturers alike. Beyond all the technical papers, podium discussions and roundtables, on the exhibition floors attendees were treated to scores of examples of customer systems that achieve previously unattainable efficiencies and power density levels.
Power densities are increasing three times or more in many applications as the demand for more power in electronics continues to increase, while the space allowable for power continues to decrease. This increase in power has the collateral effect of producing more heat. More heat traditionally results in the use of higher capacity fans and bigger heat sinks to prevent overheating of the electronic components and system failure.
GaN Systems has witnessed a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognised that GaN devices significantly improve power efficiency and power density.
As 2017 begins to unfold, I’d like to recount some of last year’s key accomplishments and provide some perspective on our expectations for the New Year. Looking back, I am struck by the number of significant gains GaN Systems enjoyed last year pertaining to the adoption of GaN technology by customers, as well as the global growth of our sales and support ecosystem. Some of our 2016 key developments include:
Electronic Specifier Editor Joe Bush spoke to Jim Witham, Chief Executive Officer of GaN Systems at electronica about the company’s offer of gallium nitride (GaN) power transistors and the role they are playing in the world’s energy reduction needs of the future.
Co-founder and Chief Technology Officer of GaN Systems, John Roberts, will deliver the keynote address at the 4th IEEE Power Electronics Society Workshop on Wide bandgap Power Devices and Applications (WiPDA).
GaN Systems has announced that it will demonstrate its GS66540C 650V 100A high current GaN power transistor at ECCE’15, the IEEE Energy Conversion Congress & Expo in Montreal, from 20th to 24th September. GaN Systems is delighted to be showcasing its family of Island Technology GaN transistors, the broadest and most complete on the market, at this premier global event being hosted in its home country.
GaN Systems will be displaying its GS66540C 650V, 100A GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe. Hosted by CERN in Geneva from 8th to 10th September, the conference and exhibition bring together leading industry figures in power electronics and experts from research and academic institutions to share knowledge and display cutting-edge developments in power technology.
GaN Systems last week showcased the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors on Booth 4D18 at PCIM Asia in Shanghai. Based on three core proprietary technologies, the GS65516T GaN high-power enhancement-mode device boasts the highest current capability on the market at 60A.