GaN-on-Si epi-wafers for HEMT devices on display at PCIM

15th April 2015
Source: EpiGaN nv
Posted By : Siobhan O'Gorman
GaN-on-Si epi-wafers for HEMT devices on display at PCIM

 

A range of Gallium Nitride (GaN) on Silicon (Si) epi-wafers that meet industrial specifications for HEMT devices at 650V will be demonstrated by EpiGaN at PCIM Europe.The company will be situated at booth 6-432.

The growing demand for electronic systems that offer high speed, high temperature and high power handling capabilities has led the semiconductor industry to rethink their choice of device materials. GaN, due to its unique characteristics such as lower ON-resistance, higher breakdown voltage, higher operating temperature and higher switching frequencies, has become the preferred candidate to revolutionise future power conversion systems.

EpiGaN produces advanced GaN-on-Si and GaN-on-SiC epitaxial wafers and delivers them to integrated device manufacturers to build high-performance power switching systems (up to 600V), as well as RF power devices for millimetre-wave applications. EpiGaN has patented its GaN epiwafer technology to enable its customers to successfully position themselves in new and rapidly growing market segments.

An important competitive advantage of EpiGaN's GaN-on-Si (up to 200mm diameter) and GaN on SiC epi-wafers produced in metal-organic chemical vapour deposition reactors is that they are compatible with the existing standard Si-CMOS production infrastructure. Thus, IDMs can continue to utilise their investment in Si processing lines.

This advantage arises from in-situ SiN layering, a key concept of EpiGaN's epi-wafer technology, which provides superior surface passivation and device reliability, and enables contamination-free processing. In-situ SiN structuring allows the use of pure AlN layers as a barrier material, with the resulting hetero-structures having a sheet resistance below 250Ω/sq.

GaN technology is beginning to be introduced to numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defence industries since it offers high breakdown strength, low noise figures and high linearity.

"Even best-in-class Silicon devices are approaching their theoretical limits," says EpiGaN Co-Founder and CEO, Marianne Germain. "We supply GaN-on-Si and GaN-on-SiC epi-wafers to the semiconductor industry to build the next-gen power switching and RF power systems, offering better power handling, higher conversion efficiency and lower volume and weight."


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