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EpiGaN nv

EpiGaN nv Articles

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Power
5th September 2018
GaN epiwafer solutions for 5G showcased

  At the Semicon Taiwan show in Taipeh (5th to 7th September), and at the European Microwave Week in Madrid/Spain (23rd to 28th September), EpiGaN will exhibit and highlight its latest GaN epiwafer developments tailored to 5G applications.

Power
5th October 2017
GaN/Si material provided for 150mm RF power product line

After the inauguration of Europe’s first 150mm GaN production line at OMMIC, EpiGaN and OMMIC have announced their partnership on GaN/Si epiwafers supply for RF power products aiming at future 5G wireless communication. EpiGaN and OMMIC are collaborating in the development of RF GaN/Si technology on 150mm diameter wafers.

Component Management
28th June 2016
EpiGaN complies to ISO9001:2015.

EpiGaN, supplier of commercial-grade 150mm- and 200mm- GaN-on-Silicon epiwafers, announces that the production facility at its headquarters in Hasselt, Belgium, is now fully certified to the quality management system ISO9001:2015.

Analysis
18th January 2016
Companies collaborate to serve GaN-on-Si customers globally

EpiGaN and SunEdison Semiconductor have signed a global representation agreement for EpiGaN's GaN-on-Si epi wafers. The terms of the global representation and distribution agreement between EpiGaN and SunEdison Semiconductor, effective January 1, 2016, grant SunEdison Semiconductor exclusive rights for the marketing and sales of EpiGaN’s 150mm and 200mm GaN-on-Si Epiwafers for power switching applications, substantially strengthening E...

Power
18th July 2015
GaN - promise to reality

  The next generation of power electronics is taking shape, argues Markus Behet, EpiGaN. The wide-bandgap compound semiconductor material is suited for switching devices that operate at high frequencies without suffering major losses.

Events News
15th April 2015
GaN-on-Si epi-wafers for HEMT devices on display at PCIM

  A range of Gallium Nitride (GaN) on Silicon (Si) epi-wafers that meet industrial specifications for HEMT devices at 650V will be demonstrated by EpiGaN at PCIM Europe.The company will be situated at booth 6-432.

Events News
18th March 2014
Conference explores industrial manufacture of GaN epiwafers

EpiGaN announced that Dr. Marianne Germain, CEO and co-Founder, will deliver a presentation at the CS International Conference 2014 in Frankfurt, Germany. Entitled “Industrial manufacturing of GaN epiwafers for High Voltage and RF markets”, the presentation will detail how an industrial material source of GaN epiwafers, truly enabling expected device performance, is required, as the GaN electronics market is predicted to significantly...

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