SemiQ has officially opened its newest office in Taiwan on April 2nd, 2024 to increase global footprint.

SemiQ has unveiled the latest addition to the company’s QSiC family, the QSiC 1200V SiC MOSFET modules in full-bridge configurations.

SemiQon from Finland, and Canada’s CMC Microsystems announce a collaboration agreement to advance silicon-based quantum processor technology.

SemiQ, a designer, developer, and global supplier of superior SiC solutions for ultra-efficient, high-performance, and high-voltage applications, will be exhibiting its latest portfolio of advanced silicon carbide (SiC) modules at the Applied Power Electronics Conference (APEC) in Long Beach, CA 25–29 February 2024.

SemiQ has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V SiC power MOSFETs in half-bridge packages.

SemiQ recently announced the expansion of its QSiC silicon carbide module portfolio. The launch includes a new series of 1200V MOSFETs, available both with and without 1200V SiC Schottky Diodes, packaged in SOT-227.

SemiQ has announced the release of its third generation 1,700V five amp Schottky SiC Diodes. The GP3D005A170B diode comes in the industry standard TO-247-2 package as well as bare die format. 10A and 20A 1700V diodes will follow shortly.