New QSiC 1200V SOT-227 SiC modules advancing energy standards

15th November 2023
Paige West

SemiQ recently announced the expansion of its QSiC silicon carbide module portfolio. The launch includes a new series of 1200V MOSFETs, available both with and without 1200V SiC Schottky Diodes, packaged in SOT-227.

The newly released SemiQ SiC modules, made from high-performance ceramics, are engineered to operate reliably in demanding conditions. These modules deliver enhanced performance, enabling greater power densities and more efficient design possibilities. Key features of the QSiC modules include a high breakdown voltage (over 1400V), capability for high-temperature operation (Tj = 175°C), and a stable Rds(On) across the full operating temperature range. They also offer good gate oxide stability and longevity, robustness against avalanche (UIS) events, and prolonged short-circuit endurance.

The target markets for these new QSiC modules, alongside the existing SOT-227 SiC SBD modules, encompass a variety of applications. These include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data centre power supplies, UPS/PFC circuits, and various automotive and industrial power applications.

To ensure high quality, all new QSiC modules undergo wafer-level gate burn-in testing, which stabilises gate threshold voltage and improves gate oxide quality. Additional stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) are conducted to confirm industrial-grade quality.

The new 1200V SOT-227 modules from SemiQ are offered in various categories: 20mΩ, 40mΩ, 80mΩ SiC MOSFET. A detailed table with part numbers is below.

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