Michael T. Robinson, SemiQ President, said: “This 1,700V Silicon Carbide Schottky Diode is the latest extension to our Gen 3 product family which was introduced in 2019. This platform was designed and built for reliability and ruggedness. It features dual layer chip passivation with over 12 million device hours of HTRB and H3TRB. Packaged devices are 100% avalanche tested in production ensuring even greater device ruggedness.”
SemiQ’s 1,700V SiC Diodes are optimized for power conversion applications where low losses and high efficiency are critical including: renewable energy, electric vehicle charging, uninterruptable power supplies (UPS), solar power, and fuel cell power systems.
Samples are in stock at SemiQ and available through Digikey with manufacturing lead times of eight weeks.