MOSFET line-up with AEC-Q101-qualified half-bridge option
Nexperia has announced a series of half-bridge (high side & low side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC converters.
Nexperia plans to grow production and increase R&D spend
Nexperia has confirmed that it will be making significant additional global investments in manufacturing capacity and research and development during 2021. The new investments are in line with a growth strategy that last year saw Wingtech Technology, Nexperia’s parent company, commit $1.85bn to building a new 300mm power semiconductor wafer fab in Lingang, Shanghai. This factory, which will go live in 2022, will have an estimated annua...
Compact protection for high-speed data lines
Nexperia has announced three new TrEOS protection devices that provide a compact method to suppress ESD in USB3.2, HDMI2.1 and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability.
80V resistor-equipped transistors for high voltage bus circuits
Nexperia has announced an 80V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50V parts cannot handle.
Leadless CAN-FD protection diodes with ESD performance
Nexperia has announced new leadless ESD protection devices for CAN-FD applications. Devices are available in leadless packages with side-wettable flanks that enable AOI tools to be used. Fully AEC-Q101-qualified, the PESD2CANFDx series parts also offer ESD and RF performance, and save PCB space.
AEC-Q101 MOSFETs with repetitive avalanche performance
Nexperia has launched a new AEC-Q101-qualified Repetitive Avalanche Application Specific FET (ASFET) portfolio focused on powertrain applications. The technology has been tested to one billion avalanche cycles and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to four times), designs can be simplified through a reduced BOM count.
Application specific FETs category for optimised MOSFETs
Nexperia has responded to industry’s demands to maximise performance by defining a new MOSFET product group. Application Specific FETs (ASFETs) feature MOSFETs with optimised parameters for specific applications. By focusing on individual applications, significant improvements can be offered.
Nexperia LED drivers in DFN package with side-wettable flanks
Nexperia has announced a new range of LED drivers in the space-saving DFN2020D-6 (SOT1118D) package. This case style features side-wettable flanks (SWF) which facilitate the use of AOI (automated optical inspection), and improve reliability. This is the first time LED drivers have been available in this beneficial package.
Nexperia common mode filter with ESD protection
Nexperia has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with ‘worst cable model’.
TrEOS ESD protection from Nexperia with high signal integrity
Nexperia has introduced four new TrEOS ESD protection devices that are AEC-Q101- qualified for automotive use and high temperature capable up to 175°C. In common with all TrEOS components, the new parts combine extremely low capacitance ensuring high signal integrity, extremely low clamping and high robustness for modern automotive interfaces.
Is the MOSFET figure of merit (FoM) still relevant?
As gate drivers are now capable of efficiently meeting large Qg requirements and faster switching topologies create smaller, more efficient systems, some often ignored parameters have now become system-critical.
Nexperia launches ‘Power Live’ 2020
Nexperia has announced ‘Power Live’, a virtual conference that will take place on 2nd-3rd July, and will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.
AEC-Q101 discretes in miniature rugged DFN packages
Nexperia has announced a wide portfolio of automotive-qualified AEC-Q101 discretes in space-saving, thermally-efficient, AOI-compatible DFN (Discrete Flat No leads) packages. The AEC-Q101 range of devices available cuts across all Nexperia’s product groups and includes switching, Schottky, Zener and protection diodes, bipolar junction transistors (BJTs), N- and P-channel MOSFETs, resistor-equipped transistors and LED drivers.
Nexperia Power Live Event, July 2-3. Full event schedule released now
Join Nexperia’s Power Live Event and watch our resident power experts present a series of on-demand demonstration videos across a number of topics in Automotive, Industrial, GaN and Power packaging. Including GaN surface mount package technology and novel Silicon-Germanium rectifiers. Engage with like-minded people in live sessions to discuss common challenges and demands. Pre-register ...
Silicon germanium rectifiers bring thermal stability
Nexperia has announced a range of new silicon germanium rectifiers (SiGe) with 120, 150, and 200V reverse voltages that combine the high efficiency of their Schottky counterparts with the thermal stability of fast recovery diodes.
P-channel MOSFETs in robust, space-saving LFPAK56 package
Nexperia has launched a family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are a well suited replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels.
Ultra-tiny MOSFETs with lowest RDS(on) for wearables
Nexperia has launched a range of ultra-tiny MOSFETs in the DFN0606 package for mobile and portable applications including wearables. The devices also offer the lowest RDS(on) for their size and employ the commonly used pitch of 0.35 mm to simplify PCB assembly processes.
Scheper stands down as CEO of Nexperia
Nexperia CEO Frans Scheper is taking early treatment just three months after China-based Wingtech took a controlling stake in the company.
Developing a GaN-based EV inverter design
Nexperia has announced a partnership with automotive engineering consulting company, Ricardo, to produce a technology demonstrator for an EV inverter using GaN-based technology. Gallium nitrade (GaN) is the preferred switch for these applications as GaN FETs lead to systems with greater efficiencies at lower costs with improved thermal performance and simpler switching topologies.
Low RDS(on) MOSFET improves performance
Nexperia has announced the release a low RDS(on) MOSFET. The PSMNR51-25YLH aims to set a new standard of 0.57mΩ at 25V. Utilising Nexperia’s NextPowerS3 technology, this performance is offered without compromising other important parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.