8- and 16-Mbit Code-Storage Serial Flash Memory in SO8N Package is an ST Microelectronics first

STMicroelectronics has announced the introduction of new high-speed 8- and 16-Mbit serial Flash memories in the market’s smallest package for these densities: the SO8N. ST is the first to offer these compact, cost-effective devices in these packages, suitable for code storage in a range of cost-sensitive computer and consumer electronic products, such as printers, optical disk drives, Wireless LAN (WLAN) modules, and set-top boxes (STBs).

The M25P80 and M25P16 are 8-Mbit (1M x 8) and 16-Mbit (2M x 8) serial Flash Memories, with advanced write-protection mechanisms, which are accessed by an SPI-compatible bus operating at up to 50 MHz, to enable program code to be loaded rapidly into the application’s RAM. Using a four-wire high-speed serial interface rather than a parallel memory bus delivers dramatic savings in board space and costs, with a smaller package and fewer pins. In addition, the system’s CPU or ASIC can also have a lower pin count.

ST’s design, in 0.11 micron technology, has enabled up to 16-Mbit memory density to be achieved in the die of the tiny 150 mils body-width SO8N package. Other packages are also available for the new devices, including the 5 x 6mm MLP8, and, for the M25P16, the 208-mils wide SO8W. All are lead-free and RoHS-compliant. The new 8- and 16-Mbit chips are important additions at the center of ST’s broad serial-Flash family, extending over the 512-Kbit to 128-Mbit density range.

These new serial Flash devices operate over a supply voltage range of 2.7V to 3.6V, and are specified for the -40 to +85 degrees C operating temperature range. Software features include both Bulk Erase and Sector Erase, flexible Page Program instructions, write protection, and a JEDEC standard Two-Byte electronic signature to allow easy device identification, with One-Byte backward compatibility. Data retention is specified as greater than 20 years, with more than 100,000 Erase/Program cycles per sector.

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