Since the device has partial internal matching, customers can reduce external matching components in their designs. Bias current may be adjusted by varying the values of the external bias resistors. The device also provides exceptional linearity, with a typical output power performance in LTE mode of 22.5dBm with adjacent channel leakage ratio of -48dBc.
The MMZ25332B4 can handle an RF input overdrive up to 30 dBm and has a human body model ESD rating of Class 2.