RF Micro Devices enjoys a strong record of RF industry firsts. RFMD was the first to introduce integrated power control for cellular power amplifiers, or PAs, (PowerStar®); the first to introduce integrated power management for PAs (PowerSmart®); the first to exceed 50% peak efficiency in 3G/4G PAs; the first to commercialize high-performance silicon CMOS for cellular switches; and the first to introduce gallium nitride (GaN) for CATV amplifier applications.
Bob Bruggeworth, president and CEO of RFMD, said, It is a pleasure to commemorate RFMD’s twentieth anniversary and celebrate RFMD’s twenty years of RF product and technology leadership by ringing the NASDAQ opening bell. RFMD is a recognized pioneer and innovator in the semiconductor industry, and our sharp focus on product and technology leadership is equally as evident today — with the continued ramp of multiple industry-leading, new products — as it was with the commercialization of the world’s first GaAs HBT PA.