STMicroelectronics Unveils Breakthrough Power Package Extending Power-Density Advantage of MDmesh V MOSFETs

The new 1mm-high surface-mount package houses the industry-standard TO-220 die size within a leadless outline measuring only 8x8mm and features an exposed metal drain pad for efficient removal of internally generated heat. Its low profile will enable designers to achieve slimmer power supply enclosures enabling compact and stylish new products for today’s markets. This new standard is available from two companies: STMicroelectronics and Infineon Technologies will introduce MOSFETs using this innovative package, which is named PowerFLAT™ 8x8 HV by ST and ThinPAK 8x8 by Infineon, therefore providing customers with a high-quality alternative source.



The new package’s compact form factor and high thermal performance, combined with the unequalled low RDS(ON) per die area of ST’s MDmesh V technology, maximize power density and reliability to save PCB space. ST will add MOSFETs in the PowerFLAT 8x8 HV to its existing MDmesh V portfolio, and today announced the first of these: the 650V STL21N65M5.



“Our fruitful co-operation with Infineon has produced a high-performance package allowing customers to benefit from cutting-edge design in a footprint supported by two major global power-semiconductor suppliers,” said Maurizio Giudice, Marketing Director, Power Transistor Division, STMicroelectronics. “Our new MOSFETs combining this package breakthrough with our unique MDmesh V process technology, which is the most advanced in the industry, will deliver the highest power density and efficiency among devices of comparable voltage rating.”



Major features of STL21N65M5:



* RDS(ON): 0.190 Ohms

* Maximum rated current (ID): 17A

* Junction-to-case thermal resistance (Rthj-c): 1.0 degrees C/W