Renesas Technology Announces 12-Product Lineup of Energy-Efficient Low-Loss Power MOSFETs Covering Wide Voltage Tolerance Range for Isolated DC-DC Converters and Low Power Inverters

The 10th generation fabrication process employed for the 12 new products has a proven track record in earlier power MOSFETs (used mainly in non-isolated DC-DC converters) designed with a focus on on-resistance*2, and it has been optimized to achieve a gate-drain charge (Qgd)*3 that is up to 50% lower than that of previous Renesas Technology products. The gate-drain charge (Qgd) is a key characteristic in achieving low switching loss in a power MOSFET. In addition, the high-performance package (Renesas Technology package code: LFPAK) lowers package resistance and improves heat dissipation characteristics, boosting product performance still further and contributing to isolated DC-DC converters with higher efficiency and reduced energy consumption.

To reduce the energy consumption of isolated DC-DC converters, there is demand for power MOSFETs with a lower gate-drain charge (Qgd), a key factor in achieving lower switching loss. The 12 new power MOSFETs are fabricated using Renesas Technology’s 0.18 μm 10th generation process, which has been optimized for this application. For example, the RJK1056DPB with 100 V voltage tolerance has a gate-drain charge of 7.5 nC, which is approximately half the 14.5 nC of Renesas Technology’s earlier HAT2173H.

The input and output voltages of an isolated DC-DC converter are determined by the voltage tolerance of the power MOSFETs used. In terms of the isolated components, an isolated DC-DC converter comprises a primary power supply as the input side and a secondary power supply as the output side. The lineup of new power MOSFETs includes products with a voltage tolerance of 80 V and 100 V, particularly in demand for the primary side, and products with a voltage tolerance of 40 V and 60 V, particularly in demand for the secondary side. Customers can choose the products that best meet their requirements.

The new power MOSFETs use Renesas Technology’s proven LFPAK (Renesas Technology package code)*4 high-performance package. It provides both low package resistance and excellent heat dispersion characteristics to prevent overheating of the element. In comparison with a conventional SOP-8 or the like, the package itself contributes to the low-loss characteristics of the product. Internal connections are made directly to a frame, reducing package inductance and ensuring suitability for high-frequency operation.