Power ICs integrate GaN FETS and logic

18th March 2016
Caroline Hayes

Believed to be the first GaN power ICs, Navitas introduces its ICs, based on its proprietary AllGaN monolithically-integrated 650V platform. They combine GaN power FETs with GaN logic and drive circuits, claimed to enable 10 to 100 times higher switching frequency than exisiting silicon circuits. 

According to the company, this makes power electronics smaller, lighter and lower in cost.

The ICs can be used to generate high frequency, energy-efficient converters for smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and data centres.

The company believes GaN has the potential to displace silicon in the power electronics market, due to its inherent high-speed, high-efficiency capabilities as a power FET. Previously, availability of high performance circuits to drive the GaN Fets sufficiently quickly and cost-effectively were limited. With monolithic integration of GaN drive and logic circuits with GaN power FETs, the company believes that the industry now has a path to cost-effective, easy-to-use, high-frequency power system designs. It says that GaN power ICs will enable low-frequency, silicon-based power systems to be replaced by high-frequency GaN to improve density, efficiency and cost.

The AllGaN platform and GaN Power ICs will be introduced in a keynote speech at the Applied Power Electronics Conference (APEC) Monday 21 March.

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