Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, circuits, applications, systems and marketing, plus a proven record of innovation with over 125 patents among its founders. The proprietary AllGaN™ process design kit monolithically-integrates the highest performance 650V GaN FET and GaN driver capabilities. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas proprietary patents are granted or pending.
Navitas Semiconductor Articles
First integrated half-bridge GaN IC reduces size, cost and weight
Navitas Semiconductor announces what it believes is the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC, with the introduction of the NV6250.
GaN ICs circuitry reduces frequency-related power losses
Navitas believes it has developed the world’s first GaN power IC, based on its proprietary AllGaN technology.
Power ICs integrate GaN FETS and logic
Believed to be the first GaN power ICs, Navitas introduces its ICs, based on its proprietary AllGaN monolithically-integrated 650V platform. They combine GaN power FETs with GaN logic and drive circuits, claimed to enable 10 to 100 times higher switching frequency than exisiting silicon circuits.