Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, circuits, applications, systems and marketing, plus a proven record of innovation with over 125 patents among its founders. The proprietary AllGaN™ process design kit monolithically-integrates the highest performance 650V GaN FET and GaN driver capabilities. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas proprietary patents are granted or pending.
Navitas Semiconductor Articles
“Welcome to planet Navitas!” at CES 2023
Navitas Semiconductor will unveil “Planet Navitas” – an immediate implementation of tomorrow’s sustainable, achievable, everyday world - at CES 2023 (Las Vegas, NV, January 5th-8th, 2023).
Navitas Drives Xiaomi Redmi Note 12 Explorer at 210w
Navitas has announced its next-gen GaNFast power ICs have been used by Xiaomi Redmi for their 120 W (Note Pro+) and 210 W (Note 12 Explorer) ultra-fast smartphone chargers.
1% to 50% in 7 minutes with Motorola's new charger
Navitas Semiconductor has announced its next-gen GaNFast power ICs have been selected for the ‘in-box’ 125W charger of Motorola’s latest smartphone, the X30 Pro.
Navitas Semiconductor and Avnet Silica announce agreement
Navitas Semiconductor and Avnet Silica announced close cooperation between the two companies to grow the market in Europe for Navitas’ advanced performance and highly power efficient GaNFast power ICs with GaNSense technology.
Navitas – GaNSense Half-Bridge power IC
GaNSense power ICs use next-generation gallium nitride (GaN) to replace silicon chips to enable 3x faster charging and 3x more power in half the size and weight for mobile chargers.
Navitas & VREMT open joint R&D Lab for next-gen EV power systems and semiconductors
Navitas Semiconductor and VREMT supplier to ZEEKR, Volvo, Polestar and Lotus, announced the opening of an advanced, joint R&D power semiconductor laboratory to accelerate EV power-system developments using Navitas’ GaNFast (gallium nitride, GaN) power ICs and GeneSiC (silicon carbide, SiC) power MOSFETs and diodes.
Navitas delivers keynote at IEEE Power Semiconductor Workshop
Navitas Semiconductor, industry specialist in gallium nitride (GaN) power ICs and silicon carbide (SiC) technologies, has announced that Dan Kinzer, the company’s co-founder and COO/CTO, will present a keynote speech on next-gen semiconductor technology at the forthcoming IEEE WiPDA (Wide Bandgap Power Devices & Applications) workshop.
Navitas’ EVP Ranbir Singh inducted into engineering hall of fame
Navitas Semiconductor, the pure-play, next-gen power semiconductor company, has announced that Dr. Ranbir Singh, EVP of the company’s GeneSiC business unit, has been inducted into the North Carolina State University’s Department of Electrical and Computer Engineering (ECE) Alumni Hall of Fame.
Navitas showcases pure-play, next-gen power semiconductors at electronica 2022
Navitas will showcase gallium nitride (GaN) and silicon carbide (SiC) technologies at Electronica 2022 between November 15-18th.
Navitas GaNSense half-bridge power ICs
Navitas Semiconductor, pure-play next-gen power semiconductor company and industry specialist in GaN power ICs, has announced GaNSense half-bridge power ICs.
Navitas 160W fast charger powers oneplus flagship 10T smartphone
Navitas Semiconductor, the industry specialist in gallium nitride (GaN) power ICs, has announced that OnePlus has, again, chosen GaNFast next-gen power ICs to fast-charge its flagship smartphone, the OnePlus 10T.
Navitas powers OnePlus’ GaN Smartphone charger
GaNFast ICs ultra-fast-charge 1-30% in only 3 minutes for OnePlus 10R/ACE 5G SUPERVOOC Endurance Edition Smartphone.
Navitas powers Xiaomi’s In-Box GaN 100W laptop fast charge
Navitas Semiconductor, supplier of gallium nitride (GaN) power integrated circuits, has announced that its Xiaomi Redmi laptop family 100W fast chargers are driven by next-gen GaNFast power ICs with GaNSense technology.
Lenovo’s Legion gaming laptops use Navitas technology
Navitas Semiconductor has announced that its next-generation GaNFast power ICs with GaNSense technology have been used in Lenovo's Legion C135 GaN charger.
Navitas GaN ICs unleash TurboPower 68W charging with motorola edge+
Navitas Semiconductor has announced that its GaNFast technology has been selected to charge Motorola’s flagship motorola edge+ (2022) smartphone.
Celebrating a shipment of 50 million GaN units
At PCIM Europe, Navitas Semiconductor announced an achievement of 50,000,000 units shipped – with zero reported GaN-related field failures. To celebrate, a Navitas GaN wafer was presented to vivo – pioneers in fast charging.
Navitas upgrades GaN IC power by 50%
At PCIM Europe, Navitas Semiconductor announced the NV6169, a new high-power 650/800 V-rated GaNFast power IC with GaNSense technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500W solar microinverters, 1.2kW data-center SMPS, and up to 4kW/5 hp motor drives.
Gallium Nitride (GaN): Electrify Our World
Navitas Semiconductor specialises in GaN power ICs and was founded in 2014. GaN power ICs integrate GaN power with drive, control, protection and sensing to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new-energy markets.
Navistas GaN IC drives vivo's 8" screen foldable phone
Navistas has announced that its next-gen GaNFast power ICs with GaNSense technology have been selected to power vivo's folding-screen 'X-Fold' in-box 80W flash charger.
PCIM Europe: Navitas
Navitas Semiconductor, the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) will highlight next-generation IC technologies and market advancement at Europe’s most prestigious power electronics conference, PCIM (Power, Control and Intelligent Motion) 2022 (May 10th – 12th, Nuremberg, Germany).