12V Power MOSFET from Vishay claims Industry-Best Maximum On-Resistance

Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 40 % at 10 V and 35°% at 4.5 V, and a 29 % lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.

The Vishay Siliconix SiR494DP will be used as the low-side MOSFET in synchronous buck converters with low input voltages (5 V to 3.3 V), in OR-ing applications with low output voltages (5 V, 3.3 V, and below), and in a wide range of systems using point-of-load (POL) power conversion with input voltages of 5 V and 3.3 V, where its low conduction and switching losses will enable more efficient use of power.

For applications with low output voltages, a 12-V drain-to-source rating may be perfectly adequate, but until now designers were forced to use 20-V devices, especially if they were looking for the combination of the lowest available on-resistance and a 20-V gate-to-source drive. The SiR494DP is the first power MOSFET to combine all three: VDS = 12 V, VGS = ± 20 V, and on-resistance of just 1.2 mO at a 10-V gate drive.

The new power MOSFET is offered in the PowerPAK® SO-8 package. The device is lead (Pb)-free, halogen-free according to IEC 61249-2-21, compliant with RoHS Directive 2002/96/EC, and is 100 % Rg- and UIS-tested.