New Logic Level Trench MOSFETs Deliver Benchmark Efficiency and Higher Current Rating

Utilizing IR’s latest trench technology, the new family of benchmark MOSFETs offers a very low RDS(on) at 4.5V Vgs to significantly improve thermal efficiency. Additionally, the devices’ higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. With a package current rating of up to 195A, the TO-220, D2PAK and TO-262 packages deliver more than 60 percent improvement over typical package ratings, while the 7-lead D2PAK further reduces RDS(on) by as much as 16 percent compared to the standard D2PAK to provide an even more robust option.

Featuring benchmark RDS(on) , the new logic level gate drive trench MOSFETs can be driven from a microcontroller or weak battery to deliver improved efficiency at light load conditions, making them ideally suited for high current DC-DC switching and DC motor drive applications.
The new family of logic level trench MOSFETs provides a voltage range of 40V to 100V. Qualified to industrial grade and moisture sensitivity level 1 (MSL1) the devices are available in all standard power packages including TO-220, D2PAK, TO-262, as well as a 7-lead D2PAK. The devices are offered lead free and are RoHS compliant.