The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1,000V and lower switching losses with a peak efficiency of 99%.
This design is configurable to work as a two-level or three-level inverter. The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Features
- Rated nominal/max input voltage at 800V/1,000VDC
- Max 10kW/10KVA output power at 400VAC 50/60Hz grid-tie connection
- Operating power factor range from 0.7lag to 0.7lead
- High voltage (1,200V) SiCMosFET based full bridge inverter for peak efficiency of 99%
- Less than 2% output current THD at full load
- Isolated current sensing using AMC1301 for load current monitoring
- Isolated driver ISO5852S with reinforced isolation for driving High voltage SiC MOSFET and UCC5320S for driving middle Si IGBT
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