GaN brings efficiency to server power supplies
High efficiency, high density power supplies in the telecomms, server and consumer adapter market are targeted by Alpha and Omega Semiconductor, with the introduction of the first transistor in its 650V aGaN family.
The AONV070V65G1 GaN transistor is a 70mΩ pure enhancement mode device manufactured on a fully qualified GaN-on-Si substrate technology that has over 50% smaller die area, 10X lower gate charge (Qg), and which eliminates the body diode reverse recovery charge (Qrr) of traditional silicon MOSFET technology, claims the company. Designers can use aGaN technology’s low on-state gate leakage to drive the transistor commercially available Si MOSFET gate drivers.
The transistor is available in a low inductance thermally enhanced DFN8x8 package. This provides a large thermal pad for heat removal as well as a separate driver sense pin for maximum controllable switching speed.
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