Available with a 20V rating, the devices offer low on-state resistance. To prevent electrostatic discharge failures, the FDMA910PZ and FDME910PZT are equipped with optimized Zener diode protection, which also reduces IGSS leakage maximum rating from 10µA to 1µA.
Features and Benefits:
FDMA910PZ:
• Max RDS(ON) = 20 mΩ at VGS = -4.5V, ID = -9.4A
• Max RDS(ON) = 24 mΩ at VGS = -2.5V, ID = -8.6A
• Max RDS(ON) = 34 mΩ at VGS = -1.8V, ID = -7.2A
• Low profile – 0.8 mm maximum in the MicroFET 2 x 2 mm package with HBM ESD protection
level > 2.8kV typical
FDME910PZT:
• Max RDS(ON) = 24mΩ at VGS = -4.5V, ID = -8A
• Max RDS(ON) = 31mΩ at VGS = -2.5V, ID = -7A
• Max RDS(ON) = 45mΩ at VGS = -1.8V, ID = -6A
• Low profile: 0.55 mm maximum in the MicroFET 1.6 x 1.6 mm Thin Package with HBM ESD protection level > 2kV typical
The FDMA910PZ and FDME910PZT are free from halogenated compounds and antimony oxides and are RoHS-compliant. Both devices provide safe operation at low-voltage and are suitable for use in handsets and portable devices.
Price: US $ in 1,000 quantity pieces
FDMA910PZ: $0.36
FDME910PZT: $0.33
Availability: Samples available upon request.
Delivery: 8-12 weeks ARO