Hamamatsu Photonics IR-Enhanced Silicon Avalanche Photodiodes
Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.The
Both the S11518 and S11519 are available in 1mm diameter and 3mm diameter active area types, which offer bandwidths between 220MHz and 400MHz. The S11519 is specially designed for low bias operation, with improved breakdown voltage, dark current and cut-off frequency characteristics compared to a conventional APD.
The increased sensitivity in the near-infrared region makes the S11518 and S11519 IR-Enhanced APDs suitable for a wide range of applications, including YAG laser monitors, high speed IR measurements, and many more.