Semiconductor manufacturer SweGaN and RFHIC partner

15th April 2024
Kristian McCann

SweGaN AB, a European semiconductor manufacturer specialising in the development and production of high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announced it has entered into a strategic partnership with South Korea-based RFHIC Corporation.

RFHIC specialises in the design and manufacture of GaN RF and microwave semiconductors for communications and defence applications. The new agreement includes an undisclosed equity investment from RFHIC, with both companies set to focus on joint research and development (R&D) and product development in the future.

Over the past decade, SweGaN has developed and produced GaN-on-SiC epitaxial solutions for RF and power devices used in various applications, including 5G telecommunications infrastructure, defence radars, satellite communications, on-board chargers, and data centres.

The strategic investment by RFHIC recognises SweGaN's QuanFINE® epitaxial solutions as a distinguishing factor among GaN-on-SiC materials currently available on the market. Through its partnership with RFHIC, SweGaN will gain additional resources to accelerate market penetration and achieve its business objectives.

RFHIC Corporation cites the partnership with SweGaN and its investment strategy as means to strengthen RFHIC’s gallium nitride semiconductor supply chain and enhance the competitiveness of its RF and microwave products within the compound semiconductor sector.

Jr-Tai Chen, CEO and Founder at SweGaN, commented: "With the accelerating demand for high-performance semiconductor materials to power a multitude of applications and increase efficiency in an energy-conscious world, the new equity investment will support SweGaN’s capacity expansion plan for its top-class GaN-on-SiC epitaxial wafers and facilitate joint product developments with RFHIC."

"We are very proud to partner with RFHIC, a leading innovator in RF GaN who is committed to enhancing the world by providing highly efficient and advanced GaN solutions," continues Chen.

As market requirements for high-power, highly efficient semiconductors are driven by the rapid growth of applications such as 5G communications, defence radars, and data centres, SweGaN is rapidly expanding its in-house manufacturing capacity and R&D capabilities. The new strategic partnership with RFHIC has the potential to significantly strengthen SweGaN’s position in key geographical areas, as the company aims to lead a transition from legacy material solutions to its innovative GaN semiconductors.

Dr. Samuel Cho, CTO and Co-founder of RFHIC Corporation, stated: "As RFHIC maps its future strategy for GaN semiconductors, including accelerated market demand for products in 5G, 6G, satellite communication and more, SweGaN’s high-performance 6-inch GaN epiwafers for RF and power semiconductors – notable for their high-power efficiency – provide a strong fit for our technological roadmap and diversification of gallium nitride epitaxial wafer suppliers."

"SweGaN’s unique epitaxial wafer development and manufacturing technology is a key factor in the high performance of gallium nitride semiconductors that we can leverage in developing new products in the 4GHz high-frequency band increasingly sought after by the market," continues Dr. Cho.

In this joint collaboration, SweGaN and RFHIC plan to address the increasing demand for GaN semiconductors and initiate new product developments for a variety of markets.

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